TY - JOUR
T1 - Effects of In and Sb mono-layers to form rotated InSb films on a Si(1 1 1) substrate
AU - Saito, Mitsufumi
AU - Mori, Masayuki
AU - Maezawa, Koichi
PY - 2008/7/30
Y1 - 2008/7/30
N2 - A new method for InSb heteroepitaxial growth on a Si substrate was introduced in our previous work, in which an InSb film was formed via an InSb bi-layer. In the present work, to study the effects of In and Sb individual layers on the InSb film quality, InSb was deposited onto an InSb bi-layer, In mono-layer, and Sb mono-layer on a Si substrate. It was found that both In and Sb layers (in other words, InSb bi-layer) were essential to form a fine InSb film.
AB - A new method for InSb heteroepitaxial growth on a Si substrate was introduced in our previous work, in which an InSb film was formed via an InSb bi-layer. In the present work, to study the effects of In and Sb individual layers on the InSb film quality, InSb was deposited onto an InSb bi-layer, In mono-layer, and Sb mono-layer on a Si substrate. It was found that both In and Sb layers (in other words, InSb bi-layer) were essential to form a fine InSb film.
KW - III-V semiconductors
KW - Molecular beam epitaxy
KW - X-ray diffraction
UR - http://www.scopus.com/inward/record.url?scp=45049083304&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2008.02.122
DO - 10.1016/j.apsusc.2008.02.122
M3 - 学術論文
AN - SCOPUS:45049083304
SN - 0169-4332
VL - 254
SP - 6052
EP - 6054
JO - Applied Surface Science
JF - Applied Surface Science
IS - 19
ER -