TY - GEN
T1 - Effect of flux ratio on GaSb films grown at a low temperature on Si(111)
AU - Monzur-Ul-Akhir, A. A.M.
AU - Mori, Masayuki
AU - Maezawa, Koichi
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/5
Y1 - 2019/5
N2 - Researchers face the challenge of depositing single-crystalline III-V compound semiconductor films on substrates like Silicon (Si) and Germanium due to the twin crystal growth. This investigation focuses on the Sb(Antimony) to Gallium(Ga) flux ratio to generate a GaSb film which is one of the III-V compound semiconductors on Si. In this study, we have tried to find out the GaSb crystalline nature in response to varied Sb to Ga flux ratio that is Ga-rich, Sb-rich and Sb to Ga Ratio-one conditions. With the XRD φ-scan pattern measurement, we found Sb-rich condition is useful in growing a High-Quality (HQ) film whereas Ga-rich condition grows an island patterned film. We observed that for a two-step growth method, if the growth of the 1st or buffer layer of GaSb films is performed at a low substrate temperature and a low growth rate, a single-crystalline GaSb film is deposited irrespective of Sb to Ga flux ratio where the 2nd layer was deposited at a high substrate temperature.
AB - Researchers face the challenge of depositing single-crystalline III-V compound semiconductor films on substrates like Silicon (Si) and Germanium due to the twin crystal growth. This investigation focuses on the Sb(Antimony) to Gallium(Ga) flux ratio to generate a GaSb film which is one of the III-V compound semiconductors on Si. In this study, we have tried to find out the GaSb crystalline nature in response to varied Sb to Ga flux ratio that is Ga-rich, Sb-rich and Sb to Ga Ratio-one conditions. With the XRD φ-scan pattern measurement, we found Sb-rich condition is useful in growing a High-Quality (HQ) film whereas Ga-rich condition grows an island patterned film. We observed that for a two-step growth method, if the growth of the 1st or buffer layer of GaSb films is performed at a low substrate temperature and a low growth rate, a single-crystalline GaSb film is deposited irrespective of Sb to Ga flux ratio where the 2nd layer was deposited at a high substrate temperature.
KW - Molecular Beam Epitaxy (MBE)
KW - Reflection High Energy Electron Diffraction (RHEED)
KW - Scanning Electron Microscope (SEM)
KW - Twin crystal
KW - X-Ray Diffraction (XRD)
UR - http://www.scopus.com/inward/record.url?scp=85074062200&partnerID=8YFLogxK
U2 - 10.1109/ICIEV.2019.8858576
DO - 10.1109/ICIEV.2019.8858576
M3 - 会議への寄与
AN - SCOPUS:85074062200
T3 - 2019 Joint 8th International Conference on Informatics, Electronics and Vision, ICIEV 2019 and 3rd International Conference on Imaging, Vision and Pattern Recognition, icIVPR 2019 with International Conference on Activity and Behavior Computing, ABC 2019
SP - 312
EP - 317
BT - 2019 Joint 8th International Conference on Informatics, Electronics and Vision, ICIEV 2019 and 3rd International Conference on Imaging, Vision and Pattern Recognition, icIVPR 2019 with International Conference on Activity and Behavior Computing, ABC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Joint 8th International Conference on Informatics, Electronics and Vision and 3rd International Conference on Imaging, Vision and Pattern Recognition, ICIEV and icIVPR 2019
Y2 - 30 May 2019 through 2 June 2019
ER -