Dependence of NO2 gas sensitivity of WO3 sputtered films on film density

Cheng Ji Jin, Toshinari Yamazaki*, Yashuyoshi Shirai, Toshio Yoshizawa, Toshio Kikuta, Noriyuki Nakatani, Humio Takeda

*この論文の責任著者

研究成果: ジャーナルへの寄稿学術論文査読

47 被引用数 (Scopus)

抄録

Pure WO3 films and WO3 films doped with noble metals such as Au, Pt, and Ru were deposited on quartz substrates by dc reactive magnetron sputtering to investigate the NO2 gas sensitivity. The temperature of the substrate and the pressure of the discharge gas were changed. The film structures were studied by X-ray diffraction, atomic force microscopy, and density measurements. The WO3 films had a triclinic structure and seemed to be composed of columns surrounded by voids. The film density decreased as the discharge gas pressure increased and the substrate temperature decreased. Gas sensitivity was measured at an NO2 gas concentration of 3 ppm. Low film density and Au doping caused a high sensitivity to NO 2 gas. The highest sensitivity was observed in a film with an Au concentration of 0.25 at.% and a density of 5.0 g/cm3, which was significantly smaller than the bulk density of 7.3 g/cm3.

本文言語英語
ページ(範囲)255-260
ページ数6
ジャーナルThin Solid Films
474
1-2
DOI
出版ステータス出版済み - 2005/03/01

ASJC Scopus 主題領域

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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