Delocalization of the f electron in CexLa1-xRu 2Si2

Yuji Matsumoto; Noriaki Kimura; Haruyoshi Aoki; Motoi Kimata; Taichi Terashima; Shinya Uji; Tetsuo Okane; Hiroshi Yamagami

doi:10.1143/JPSJ.79.083706

Delocalization of the f electron in Ce_xLa_1-xRu ₂Si₂

Yuji Matsumoto^*, Noriaki Kimura, Haruyoshi Aoki, Motoi Kimata, Taichi Terashima, Shinya Uji, Tetsuo Okane, Hiroshi Yamagami

^*この論文の責任著者

物理学科

研究成果: ジャーナルへの寄稿 › 学術論文 › 査読

8 被引用数 (Scopus)

抄録

We have preformed the de Haas-van Alphen effect measurements in Ce _xLa_1-xRu₂Si₂ with magnetic fields in the (001) plane. All the oscillations corresponding to those in LaRu2Si2 can be observed in low Ce concentration samples and the evolution of the Fermi surface properties with x is found to depend strongly on the Fermi surface sheet. We show that the evolution can be attributed to anisotropic hybridization of the f electron with conduction electrons and resultant delocalization of the f electron.

本文言語	英語
論文番号	083706
ジャーナル	Journal of the Physical Society of Japan
巻	79
号	8
DOI	https://doi.org/10.1143/JPSJ.79.083706
出版ステータス	出版済み - 2010/08

ASJC Scopus 主題領域

物理学および天文学一般

文献へのアクセス

10.1143/JPSJ.79.083706

引用スタイル

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title = "Delocalization of the f electron in CexLa1-xRu 2Si2",

abstract = "We have preformed the de Haas-van Alphen effect measurements in Ce xLa1-xRu2Si2 with magnetic fields in the (001) plane. All the oscillations corresponding to those in LaRu2Si2 can be observed in low Ce concentration samples and the evolution of the Fermi surface properties with x is found to depend strongly on the Fermi surface sheet. We show that the evolution can be attributed to anisotropic hybridization of the f electron with conduction electrons and resultant delocalization of the f electron.",

keywords = "CeLaRuSi, Delocalize, Dhva effect, Kondo effect, Strong correlation, f electron",

author = "Yuji Matsumoto and Noriaki Kimura and Haruyoshi Aoki and Motoi Kimata and Taichi Terashima and Shinya Uji and Tetsuo Okane and Hiroshi Yamagami",

year = "2010",

month = aug,

doi = "10.1143/JPSJ.79.083706",

language = "英語",

volume = "79",

journal = "Journal of the Physical Society of Japan",

issn = "0031-9015",

publisher = "The Physical Society of Japan",

number = "8",

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TY - JOUR

T1 - Delocalization of the f electron in CexLa1-xRu 2Si2

AU - Matsumoto, Yuji

AU - Kimura, Noriaki

AU - Aoki, Haruyoshi

AU - Kimata, Motoi

AU - Terashima, Taichi

AU - Uji, Shinya

AU - Okane, Tetsuo

AU - Yamagami, Hiroshi

PY - 2010/8

Y1 - 2010/8

N2 - We have preformed the de Haas-van Alphen effect measurements in Ce xLa1-xRu2Si2 with magnetic fields in the (001) plane. All the oscillations corresponding to those in LaRu2Si2 can be observed in low Ce concentration samples and the evolution of the Fermi surface properties with x is found to depend strongly on the Fermi surface sheet. We show that the evolution can be attributed to anisotropic hybridization of the f electron with conduction electrons and resultant delocalization of the f electron.

AB - We have preformed the de Haas-van Alphen effect measurements in Ce xLa1-xRu2Si2 with magnetic fields in the (001) plane. All the oscillations corresponding to those in LaRu2Si2 can be observed in low Ce concentration samples and the evolution of the Fermi surface properties with x is found to depend strongly on the Fermi surface sheet. We show that the evolution can be attributed to anisotropic hybridization of the f electron with conduction electrons and resultant delocalization of the f electron.

KW - CeLaRuSi

KW - Delocalize

KW - Dhva effect

KW - Kondo effect

KW - Strong correlation

KW - f electron

UR - http://www.scopus.com/inward/record.url?scp=77956422826&partnerID=8YFLogxK

U2 - 10.1143/JPSJ.79.083706

DO - 10.1143/JPSJ.79.083706

M3 - 学術論文

AN - SCOPUS:77956422826

SN - 0031-9015

VL - 79

JO - Journal of the Physical Society of Japan

JF - Journal of the Physical Society of Japan

IS - 8

M1 - 083706

ER -

Delocalization of the f electron in CexLa1-xRu 2Si2

抄録

ASJC Scopus 主題領域

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引用スタイル

Delocalization of the f electron in Ce_xLa_1-xRu ₂Si₂