Delocalization of the f electron in CexLa1-xRu 2Si2 - The de Haas-van Alphen effect measurement

Y. Matsumoto; N. Kimura; T. Komatsubara; H. Aoki; N. Kurita; T. Terashima; S. Uji

doi:10.1088/1742-6596/391/1/012042

Delocalization of the f electron in Ce_xLa_1-xRu ₂Si₂ - The de Haas-van Alphen effect measurement

Y. Matsumoto^*, N. Kimura, T. Komatsubara, H. Aoki, N. Kurita, T. Terashima, S. Uji

^*この論文の責任著者

物理学科

研究成果: ジャーナルへの寄稿 › 会議記事 › 査読

1 被引用数 (Scopus)

抄録

We report the first observation of the continuous Fermi surface (FS) variation from La compound (LaRu2Si2) with no f electron to Ce compound (CeRu2Si2) with itinerant f electron via the de Haas-van Alphen (dHvA) effect. The dHvA frequency smoothly varies with Ce concentration and there is no discontinuous change with Ce concentration. It is found that the effective mass and signal amplitude with Ce concentration depends strongly on the Fermi surface sheet, and the effective mass is enhanced toward xc (= 0.91) and the signal amplitude reduces around xc or somewhere between xc and x ∼ 0.8.

本文言語	英語
論文番号	012042
ジャーナル	Journal of Physics: Conference Series
巻	391
号	1
DOI	https://doi.org/10.1088/1742-6596/391/1/012042
出版ステータス	出版済み - 2012
イベント	International Conference on Strongly Correlated Electron Systems, SCES 2011 - Cambridge, 英国継続期間: 2011/08/29 → 2011/09/03

ASJC Scopus 主題領域

物理学および天文学一般

文献へのアクセス

10.1088/1742-6596/391/1/012042

引用スタイル

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title = "Delocalization of the f electron in CexLa1-xRu 2Si2 - The de Haas-van Alphen effect measurement",

abstract = "We report the first observation of the continuous Fermi surface (FS) variation from La compound (LaRu2Si2) with no f electron to Ce compound (CeRu2Si2) with itinerant f electron via the de Haas-van Alphen (dHvA) effect. The dHvA frequency smoothly varies with Ce concentration and there is no discontinuous change with Ce concentration. It is found that the effective mass and signal amplitude with Ce concentration depends strongly on the Fermi surface sheet, and the effective mass is enhanced toward xc (= 0.91) and the signal amplitude reduces around xc or somewhere between xc and x ∼ 0.8.",

author = "Y. Matsumoto and N. Kimura and T. Komatsubara and H. Aoki and N. Kurita and T. Terashima and S. Uji",

year = "2012",

doi = "10.1088/1742-6596/391/1/012042",

language = "英語",

volume = "391",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

note = "International Conference on Strongly Correlated Electron Systems, SCES 2011 ; Conference date: 29-08-2011 Through 03-09-2011",

}

TY - JOUR

T1 - Delocalization of the f electron in CexLa1-xRu 2Si2 - The de Haas-van Alphen effect measurement

AU - Matsumoto, Y.

AU - Kimura, N.

AU - Komatsubara, T.

AU - Aoki, H.

AU - Kurita, N.

AU - Terashima, T.

AU - Uji, S.

PY - 2012

Y1 - 2012

N2 - We report the first observation of the continuous Fermi surface (FS) variation from La compound (LaRu2Si2) with no f electron to Ce compound (CeRu2Si2) with itinerant f electron via the de Haas-van Alphen (dHvA) effect. The dHvA frequency smoothly varies with Ce concentration and there is no discontinuous change with Ce concentration. It is found that the effective mass and signal amplitude with Ce concentration depends strongly on the Fermi surface sheet, and the effective mass is enhanced toward xc (= 0.91) and the signal amplitude reduces around xc or somewhere between xc and x ∼ 0.8.

AB - We report the first observation of the continuous Fermi surface (FS) variation from La compound (LaRu2Si2) with no f electron to Ce compound (CeRu2Si2) with itinerant f electron via the de Haas-van Alphen (dHvA) effect. The dHvA frequency smoothly varies with Ce concentration and there is no discontinuous change with Ce concentration. It is found that the effective mass and signal amplitude with Ce concentration depends strongly on the Fermi surface sheet, and the effective mass is enhanced toward xc (= 0.91) and the signal amplitude reduces around xc or somewhere between xc and x ∼ 0.8.

UR - http://www.scopus.com/inward/record.url?scp=84874914085&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/391/1/012042

DO - 10.1088/1742-6596/391/1/012042

M3 - 会議記事

AN - SCOPUS:84874914085

SN - 1742-6588

VL - 391

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012042

T2 - International Conference on Strongly Correlated Electron Systems, SCES 2011

Y2 - 29 August 2011 through 3 September 2011

ER -

Delocalization of the f electron in CexLa1-xRu 2Si2 - The de Haas-van Alphen effect measurement

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ASJC Scopus 主題領域

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引用スタイル

Delocalization of the f electron in Ce_xLa_1-xRu ₂Si₂ - The de Haas-van Alphen effect measurement