Characterization of Al ₂O ₃/InSb/Si MOS diodes having various InSb thicknesses grown on Si(111) substrates

Keyphrases

• Aluminum Oxide 100%
• InSb 100%
• Si(111) Substrate 100%
• MOS Diode 100%
• Capacitance-voltage 33%
• MOSFET 20%
• Si(111) 13%
• Special Care 6%
• Si Substrate 6%
• Surface Reconstruction 6%
• Lattice Mismatch 6%
• Crystal Quality 6%
• Growth Techniques 6%
• Pseudomorphic 6%
• Atomic Layer Deposition 6%
• Insulator Film 6%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Crystal Quality 33%
• Deposited Film 33%
• Si Substrate 33%
• Lattice Mismatch 33%
• Initial Condition 33%
• Atomic Layer Deposition 33%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Film 33%
• Surface Reconstruction 33%
• Lattice Mismatch 33%
• Molecular Beam Epitaxy 33%