抄録
In2O3 pyramids and octahedrons were synthesized on a silicon substrate by catalyst-free and improved chemical vapor deposition in order to reduce the influence of undesired doping or impurities on the observed properties, directly from metallic indium by controlled oxidation. These single crystalline In2O3 structures have potential use in ultra-sensitive gas and chemical sensors.
本文言語 | 英語 |
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ページ(範囲) | L9 |
ジャーナル | Journal of Alloys and Compounds |
巻 | 480 |
号 | 2 |
DOI | |
出版ステータス | 出版済み - 2009/07/08 |
ASJC Scopus 主題領域
- 材料力学
- 機械工学
- 金属および合金
- 材料化学