工学科　電気電子工学コース

Keyphrases

1. (001) Substrate 10%
2. AlGaAs 20%
3. AlGaN-GaN 15%
4. Alq3 15%
5. Analytical Results 14%
6. Ankle Joint 11%
7. Annealing 19%
8. Antenna 35%
9. Barrier Height 14%
10. Buffer Layer 20%
11. Carrier Injection 10%
12. Cell-based 11%
13. Channel Capacity 25%
14. Chaos Generator 10%
15. Control Constraints 12%
16. Control Law 10%
17. Control Method 17%
18. Control System 12%
19. Controller 11%
20. Current-voltage Characteristics 10%
21. Diode 19%
22. Electric Field (E-field) 20%
23. Electrical Properties 17%
24. Electromagnet 10%
25. Electron Beam 11%
26. Fabrication Methods 14%
27. Fading Emulator 10%
28. Finite-difference Time-domain Method 12%
29. Frequency Divider 13%
30. Gallium Arsenide 28%
31. GaN HEMT 22%
32. Gas Sensing Properties 10%
33. Gas Sensor 16%
34. Haar Wavelet 14%
35. Heart Rate 11%
36. Heteroepitaxial Growth 13%
37. High Efficiency 12%
38. High Electron Mobility Transistor 24%
39. High Performance 18%
40. High Power Microwave 10%
41. High-resolution 15%
42. High-speed Operation 10%
43. Human Walking Motion 12%
44. InP-based 15%
45. InSb 40%
46. Interfacial Layer 11%
47. Liquid Crystal 18%
48. Liquid Crystal Cell 10%
49. Logic Element 24%
50. Logic Gates 18%
51. Magnetic Bearing 14%
52. Magnetic Bearing System 11%
53. Magnetic Levitation 19%
54. Maximum Luminance 14%
55. Metal-insulator-semiconductor Field-effect Transistor (MISFET) 12%
56. Microscopy 20%
57. Millimeter Wave 21%
58. MIMO Antenna 17%
59. Mixed Single Layer 25%
60. Molybdenum Trioxide 26%
61. Multiple-input multiple-output Antenna 20%
62. Negative Differential Resistance 11%
63. Nematic Liquid Crystal 15%
64. Organic Electroluminescent Devices 24%
65. Organic Layer 10%
66. Organic Light-emitting Diodes 60%
67. Organic Photodiodes 12%
68. Organic Thin-film Transistors 20%
69. Passive Millimeter Wave 11%
70. Pentacene 21%
71. Permanent Magnet 19%
72. Phenyl 12%
73. Plasma Focus Device 12%
74. Real-time Pricing 12%
75. Reference Governor 24%
76. Repulsive Type 21%
77. Resonance Absorption 12%
78. Resonant Tunneling 63%
79. Resonant Tunneling Diode 58%
80. Response Time 11%
81. Rochelle Salt 10%
82. Room Temperature 19%
83. Rubrene 15%
84. Self-aligned 29%
85. Self-alignment 14%
86. Series-connected 11%
87. Si(111) 34%
88. Solution Process 15%
89. Sputtered Films 17%
90. Submillimeter-wave 12%
91. Temperature Effect 42%
92. Three-dimensional (3D) 22%
93. Threshold Voltage 16%
94. Transistor 17%
95. Transmission Line 12%
96. Transmittance 10%
97. Transverse Electric Field 10%
98. Triglycine Sulfate 31%
99. Two Dimensional 19%
100. Waveguide 16%

Engineering

1. Aluminium Gallium Arsenide 19%
2. Analytical Result 15%
3. Angle-of-Arrival 13%
4. Anisotropic 7%
5. Antenna 76%
6. Antenna Arrays 12%
7. Barrier Height 10%
8. Bearing System 12%
9. Bistables 27%
10. Buffer Layer 11%
11. Channel Capacity 24%
12. Control Constraint 16%
13. Control Law 11%
14. Control Scheme 9%
15. Control Strategy 12%
16. Control System 13%
17. Current Drain 9%
18. Current-Voltage Characteristic 8%
19. Cutoff Frequency 13%
20. Deposited Film 11%
21. Dielectrics 25%
22. Display Mode 10%
23. Drain Electrode 9%
24. Electric Field 32%
25. Electric Lines 21%
26. Emitting Device 19%
27. Energy Engineering 29%
28. Experimental Result 36%
29. Feedback Control 12%
30. Field Effect Transistor 16%
31. Field-Effect Transistor 12%
32. Finite Element Analysis 9%
33. Flip Flop Circuits 9%
34. Frequency Characteristic 9%
35. Frequency Operation 8%
36. Gallium Arsenide 33%
37. Gas Pressure 9%
38. Gas Sensor 19%
39. Gate Electrode 11%
40. Gaussians 9%
41. Glass Slide 8%
42. Good Agreement 15%
43. Harmonics 13%
44. Heterojunctions 13%
45. High Resolution 11%
46. Human Walking 14%
47. Interfacial Layer 9%
48. Inverter 15%
49. Joints (Structural Components) 9%
50. Liquid Crystal 47%
51. Liquid Crystal Display 8%
52. Logic Gate 19%
53. Low-Temperature 10%
54. Magnetic Bearing 21%
55. Magnetic Levitation 22%
56. Metal-Oxide-Semiconductor Field-Effect Transistor 8%
57. Millimeter Wave 26%
58. Multiple-Input Multiple-Output 57%
59. Nanomaterial 11%
60. Nanowire 13%
61. Negative Differential Resistance 9%
62. Organic Layer 11%
63. Organic Light-Emitting Diode 27%
64. Organic Solar Cells 8%
65. Oscillator 26%
66. Output Voltage 14%
67. Permanent Magnet 23%
68. Phased Array 9%
69. Photodiode 8%
70. Photovoltaics 13%
71. Piezoelectric 9%
72. Porosity 12%
73. Power Ratio 9%
74. Propagation Environment 10%
75. Quantum Dot 8%
76. Ray Diffraction 8%
77. Real-Time Pricing 9%
78. Resonant Tunneling 100%
79. Resonator 17%
80. Response Time 9%
81. Robot 11%
82. Rochelle Salt 8%
83. Room Temperature 16%
84. Rotors 10%
85. Scattering 8%
86. Sensing Property 18%
87. Sensor Array 8%
88. Sensor System 9%
89. Speed Operation 14%
90. Substrate Temperature 8%
91. Surface Plasmon 8%
92. Switching Control 13%
93. Temperature Dependence 15%
94. Thin Films 27%
95. Thin-Film Transistor 12%
96. Time Domain 26%
97. Time Domain Processing 7%
98. Transients 8%
99. Two Dimensional 19%
100. Waveguide 30%