Transport properties in filled skutterudite GdRu4P12

M. Watanabe; K. Tanaka; S. Tatsuoka; T. Saito; R. Miyazaki; K. Takeda; T. Namiki; K. Kuwahara; R. Higashinaka; Y. Aoki; H. Sato

doi:10.1088/1742-6596/200/1/012222

Transport properties in filled skutterudite GdRu₄P₁₂

M. Watanabe^*, K. Tanaka, S. Tatsuoka, T. Saito, R. Miyazaki, K. Takeda, T. Namiki, K. Kuwahara, R. Higashinaka, Y. Aoki, H. Sato

^*Corresponding author for this work

Materials Design and Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We have investigated the Hall effect in GdRu₄P₁₂ for the first time. From the temperature and magnetic field dependences of the Hall effect along with the magnetoresistance, we evaluated the change in carrier density across the antiferromagnetic (AF) transition accompanied by the Fermi surface reconstruction. About one tenth of carriers remain in the AF phase, in contrast with PrRu₄P₁₂ where most of the carriers disappear in the ordered phase. The anomalous part of Hall coefficient in GdRu₄P₁₂ is smaller than those in the PrRu ₄P₁₂ and PrFe₄P₁₂, which is consistent with the well localized nature of 4f electrons.

Original language	English
Article number	012222
Journal	Journal of Physics: Conference Series
Volume	200
Issue number	SECTION 1
DOIs	https://doi.org/10.1088/1742-6596/200/1/012222
State	Published - 2010

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1088/1742-6596/200/1/012222

Cite this

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title = "Transport properties in filled skutterudite GdRu4P12",

abstract = "We have investigated the Hall effect in GdRu4P12 for the first time. From the temperature and magnetic field dependences of the Hall effect along with the magnetoresistance, we evaluated the change in carrier density across the antiferromagnetic (AF) transition accompanied by the Fermi surface reconstruction. About one tenth of carriers remain in the AF phase, in contrast with PrRu4P12 where most of the carriers disappear in the ordered phase. The anomalous part of Hall coefficient in GdRu4P12 is smaller than those in the PrRu 4P12 and PrFe4P12, which is consistent with the well localized nature of 4f electrons.",

author = "M. Watanabe and K. Tanaka and S. Tatsuoka and T. Saito and R. Miyazaki and K. Takeda and T. Namiki and K. Kuwahara and R. Higashinaka and Y. Aoki and H. Sato",

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T1 - Transport properties in filled skutterudite GdRu4P12

AU - Watanabe, M.

AU - Tanaka, K.

AU - Tatsuoka, S.

AU - Saito, T.

AU - Miyazaki, R.

AU - Takeda, K.

AU - Namiki, T.

AU - Kuwahara, K.

AU - Higashinaka, R.

AU - Aoki, Y.

AU - Sato, H.

PY - 2010

Y1 - 2010

N2 - We have investigated the Hall effect in GdRu4P12 for the first time. From the temperature and magnetic field dependences of the Hall effect along with the magnetoresistance, we evaluated the change in carrier density across the antiferromagnetic (AF) transition accompanied by the Fermi surface reconstruction. About one tenth of carriers remain in the AF phase, in contrast with PrRu4P12 where most of the carriers disappear in the ordered phase. The anomalous part of Hall coefficient in GdRu4P12 is smaller than those in the PrRu 4P12 and PrFe4P12, which is consistent with the well localized nature of 4f electrons.

AB - We have investigated the Hall effect in GdRu4P12 for the first time. From the temperature and magnetic field dependences of the Hall effect along with the magnetoresistance, we evaluated the change in carrier density across the antiferromagnetic (AF) transition accompanied by the Fermi surface reconstruction. About one tenth of carriers remain in the AF phase, in contrast with PrRu4P12 where most of the carriers disappear in the ordered phase. The anomalous part of Hall coefficient in GdRu4P12 is smaller than those in the PrRu 4P12 and PrFe4P12, which is consistent with the well localized nature of 4f electrons.

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