Temperature dependence of carrier injection in small molecular organic light emitting device with a mixed single layer

Zhaokui Wang; Yanhui Lou; Shigeki Naka; Hiroyuki Okada

doi:10.1016/j.cplett.2010.10.056

Temperature dependence of carrier injection in small molecular organic light emitting device with a mixed single layer

Zhaokui Wang^*, Yanhui Lou, Shigeki Naka, Hiroyuki Okada

^*Corresponding author for this work

Electric and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We investigated the carrier injection properties in small molecular organic light emitting devices with a mixed single layer by measuring current-voltage characteristics using Au/MoO₃ as hole and Al alloy as electron injection electrodes. The carrier injection mechanism at the interface was primarily ascribed to the Schottky thermionic emission with the barrier height of 0.25 eV for holes and 0.67 eV for electrons. It was found that the barrier height of the electron was dependent on LUMO level of electron transport material. In addition, the interfacial state analysis demonstrated that the electron barrier height was also dependent on the interfacial conditions of the devices.

Original language	English
Pages (from-to)	75-79
Number of pages	5
Journal	Chemical Physics Letters
Volume	501
Issue number	1-3
DOIs	https://doi.org/10.1016/j.cplett.2010.10.056
State	Published - 2010/12/06

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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title = "Temperature dependence of carrier injection in small molecular organic light emitting device with a mixed single layer",

abstract = "We investigated the carrier injection properties in small molecular organic light emitting devices with a mixed single layer by measuring current-voltage characteristics using Au/MoO3 as hole and Al alloy as electron injection electrodes. The carrier injection mechanism at the interface was primarily ascribed to the Schottky thermionic emission with the barrier height of 0.25 eV for holes and 0.67 eV for electrons. It was found that the barrier height of the electron was dependent on LUMO level of electron transport material. In addition, the interfacial state analysis demonstrated that the electron barrier height was also dependent on the interfacial conditions of the devices.",

author = "Zhaokui Wang and Yanhui Lou and Shigeki Naka and Hiroyuki Okada",

note = "Funding Information: This work is partly supported by regional innovation of R&D projects, overseen by the Ministry of Economy, Trade and Industry (METI), Japan .",

year = "2010",

month = dec,

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doi = "10.1016/j.cplett.2010.10.056",

language = "英語",

volume = "501",

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journal = "Chemical Physics Letters",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Temperature dependence of carrier injection in small molecular organic light emitting device with a mixed single layer

AU - Wang, Zhaokui

AU - Lou, Yanhui

AU - Naka, Shigeki

AU - Okada, Hiroyuki

N1 - Funding Information: This work is partly supported by regional innovation of R&D projects, overseen by the Ministry of Economy, Trade and Industry (METI), Japan .

PY - 2010/12/6

Y1 - 2010/12/6

N2 - We investigated the carrier injection properties in small molecular organic light emitting devices with a mixed single layer by measuring current-voltage characteristics using Au/MoO3 as hole and Al alloy as electron injection electrodes. The carrier injection mechanism at the interface was primarily ascribed to the Schottky thermionic emission with the barrier height of 0.25 eV for holes and 0.67 eV for electrons. It was found that the barrier height of the electron was dependent on LUMO level of electron transport material. In addition, the interfacial state analysis demonstrated that the electron barrier height was also dependent on the interfacial conditions of the devices.

AB - We investigated the carrier injection properties in small molecular organic light emitting devices with a mixed single layer by measuring current-voltage characteristics using Au/MoO3 as hole and Al alloy as electron injection electrodes. The carrier injection mechanism at the interface was primarily ascribed to the Schottky thermionic emission with the barrier height of 0.25 eV for holes and 0.67 eV for electrons. It was found that the barrier height of the electron was dependent on LUMO level of electron transport material. In addition, the interfacial state analysis demonstrated that the electron barrier height was also dependent on the interfacial conditions of the devices.

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U2 - 10.1016/j.cplett.2010.10.056

DO - 10.1016/j.cplett.2010.10.056

M3 - 学術論文

AN - SCOPUS:78649630896

SN - 0009-2614

VL - 501

SP - 75

EP - 79

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 1-3

ER -

Temperature dependence of carrier injection in small molecular organic light emitting device with a mixed single layer

Abstract

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