Site-specific electron-relaxation caused by Si:2p core-level photoionization: Comparison between F3SiCH2CH2Si(CH3)3 and Cl3SiCH2CH2Si(CH3)3 vapors by means of photoelectron auger electron coincidence spectroscopy

Shin Ichi Nagaoka; Takuhiro Kakiuchi; Joji Ohshita; Osamu Takahashi; Yasumasa Hikosaka

doi:10.1021/acs.jpca.6b09399

Site-specific electron-relaxation caused by Si:2p core-level photoionization: Comparison between F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ vapors by means of photoelectron auger electron coincidence spectroscopy

Shin Ichi Nagaoka^*, Takuhiro Kakiuchi, Joji Ohshita, Osamu Takahashi, Yasumasa Hikosaka

^*Corresponding author for this work

Faculty of Liberal Arts and Sciences

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Site-specific electron relaxations caused by Si:2p core-level photoionizations in F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ vapors have been studied by means of the photoelectron Auger electron coincidence spectroscopy. F₃SiCH₂CH₂Si(CH₃)₃ shows almost 100% site-specificity in fragmentation caused by the Si:2p ionization. However, substitution of Cl for F of F₃SiCH₂CH₂Si(CH₃)₃ considerably reduces the site-specificity at the Si atom bonded to three halogen atoms, with the site-specificity at the Si site bonded to three methyl groups remaining largely unchanged. The site-specificity reduction in Cl₃SiCH₂CH₂Si(CH₃)₃ is considered to take place during the transient period between Si: L₂₃VV Auger electron emission and the subsequent fragmentation. The reason for the reduction can be explained in terms of some differences between these two molecules in the L₂₃VV Auger decay at the Si site bonded to the three halogen atoms.

Original language	English
Pages (from-to)	9907-9915
Number of pages	9
Journal	Journal of Physical Chemistry A
Volume	120
Issue number	50
DOIs	https://doi.org/10.1021/acs.jpca.6b09399
State	Published - 2016/11/28

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Physical and Theoretical Chemistry

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Nagaoka, S. I., Kakiuchi, T., Ohshita, J., Takahashi, O., & Hikosaka, Y. (2016). Site-specific electron-relaxation caused by Si:2p core-level photoionization: Comparison between F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ vapors by means of photoelectron auger electron coincidence spectroscopy. Journal of Physical Chemistry A, 120(50), 9907-9915. https://doi.org/10.1021/acs.jpca.6b09399

@article{7913c4eb2dd441338061906444dce765,

title = "Site-specific electron-relaxation caused by Si:2p core-level photoionization: Comparison between F3SiCH2CH2Si(CH3)3 and Cl3SiCH2CH2Si(CH3)3 vapors by means of photoelectron auger electron coincidence spectroscopy",

abstract = "Site-specific electron relaxations caused by Si:2p core-level photoionizations in F3SiCH2CH2Si(CH3)3 and Cl3SiCH2CH2Si(CH3)3 vapors have been studied by means of the photoelectron Auger electron coincidence spectroscopy. F3SiCH2CH2Si(CH3)3 shows almost 100% site-specificity in fragmentation caused by the Si:2p ionization. However, substitution of Cl for F of F3SiCH2CH2Si(CH3)3 considerably reduces the site-specificity at the Si atom bonded to three halogen atoms, with the site-specificity at the Si site bonded to three methyl groups remaining largely unchanged. The site-specificity reduction in Cl3SiCH2CH2Si(CH3)3 is considered to take place during the transient period between Si: L23VV Auger electron emission and the subsequent fragmentation. The reason for the reduction can be explained in terms of some differences between these two molecules in the L23VV Auger decay at the Si site bonded to the three halogen atoms.",

author = "Nagaoka, {Shin Ichi} and Takuhiro Kakiuchi and Joji Ohshita and Osamu Takahashi and Yasumasa Hikosaka",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = nov,

day = "28",

doi = "10.1021/acs.jpca.6b09399",

language = "英語",

volume = "120",

pages = "9907--9915",

journal = "Journal of Physical Chemistry A",

issn = "1089-5639",

publisher = "American Chemical Society",

number = "50",

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Nagaoka, SI, Kakiuchi, T, Ohshita, J, Takahashi, O & Hikosaka, Y 2016, 'Site-specific electron-relaxation caused by Si:2p core-level photoionization: Comparison between F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ vapors by means of photoelectron auger electron coincidence spectroscopy', Journal of Physical Chemistry A, vol. 120, no. 50, pp. 9907-9915. https://doi.org/10.1021/acs.jpca.6b09399

Site-specific electron-relaxation caused by Si:2p core-level photoionization: Comparison between F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ vapors by means of photoelectron auger electron coincidence spectroscopy. / Nagaoka, Shin Ichi; Kakiuchi, Takuhiro; Ohshita, Joji et al.
In: Journal of Physical Chemistry A, Vol. 120, No. 50, 28.11.2016, p. 9907-9915.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Site-specific electron-relaxation caused by Si:2p core-level photoionization

T2 - Comparison between F3SiCH2CH2Si(CH3)3 and Cl3SiCH2CH2Si(CH3)3 vapors by means of photoelectron auger electron coincidence spectroscopy

AU - Nagaoka, Shin Ichi

AU - Kakiuchi, Takuhiro

AU - Ohshita, Joji

AU - Takahashi, Osamu

AU - Hikosaka, Yasumasa

PY - 2016/11/28

Y1 - 2016/11/28

N2 - Site-specific electron relaxations caused by Si:2p core-level photoionizations in F3SiCH2CH2Si(CH3)3 and Cl3SiCH2CH2Si(CH3)3 vapors have been studied by means of the photoelectron Auger electron coincidence spectroscopy. F3SiCH2CH2Si(CH3)3 shows almost 100% site-specificity in fragmentation caused by the Si:2p ionization. However, substitution of Cl for F of F3SiCH2CH2Si(CH3)3 considerably reduces the site-specificity at the Si atom bonded to three halogen atoms, with the site-specificity at the Si site bonded to three methyl groups remaining largely unchanged. The site-specificity reduction in Cl3SiCH2CH2Si(CH3)3 is considered to take place during the transient period between Si: L23VV Auger electron emission and the subsequent fragmentation. The reason for the reduction can be explained in terms of some differences between these two molecules in the L23VV Auger decay at the Si site bonded to the three halogen atoms.

AB - Site-specific electron relaxations caused by Si:2p core-level photoionizations in F3SiCH2CH2Si(CH3)3 and Cl3SiCH2CH2Si(CH3)3 vapors have been studied by means of the photoelectron Auger electron coincidence spectroscopy. F3SiCH2CH2Si(CH3)3 shows almost 100% site-specificity in fragmentation caused by the Si:2p ionization. However, substitution of Cl for F of F3SiCH2CH2Si(CH3)3 considerably reduces the site-specificity at the Si atom bonded to three halogen atoms, with the site-specificity at the Si site bonded to three methyl groups remaining largely unchanged. The site-specificity reduction in Cl3SiCH2CH2Si(CH3)3 is considered to take place during the transient period between Si: L23VV Auger electron emission and the subsequent fragmentation. The reason for the reduction can be explained in terms of some differences between these two molecules in the L23VV Auger decay at the Si site bonded to the three halogen atoms.

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U2 - 10.1021/acs.jpca.6b09399

DO - 10.1021/acs.jpca.6b09399

M3 - 学術論文

AN - SCOPUS:85041737235

SN - 1089-5639

VL - 120

SP - 9907

EP - 9915

JO - Journal of Physical Chemistry A

JF - Journal of Physical Chemistry A

IS - 50

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