TY - JOUR
T1 - Retention and desorption behavior of tritium in Si related ceramics
AU - Oya, Yasuhisa
AU - Hatano, Yuji
AU - Hara, Masanori
AU - Matsuyama, Masao
AU - Okuno, Kenji
N1 - Funding Information:
This work was supported by the Hydrogen Isotope Research Center at University of Toyama under the Joint Work contract # HRC2011-01.
PY - 2013
Y1 - 2013
N2 - Hydrogen isotope retention and desorption behaviors for Silicon carbide (SiC), Silicon nitride (Si3N4) and Silicon dioxide (SiO2) were studied to elucidate the fundamental process of hydrogen isotope in Si related ceramics by means of T-IP (tritium imaging plate), thermal desorption spectroscopy (TDS) and X-ray photoelectron spectroscopy (XPS). The tritium gas exposure at 673 K showed that tritium was precipitated on the surface for SiO2, although that for SiC was uniformly retained inside the bulk. The 0.2 keV D2+ implantation revealed that the deuterium desorption stages for Si related ceramics were consisted of four desorption stages at around 450 K, 650 K, 800 K, and 950 K, attributing to the desorptions of deuterium trapped on the surface, retained in interstitial sites, trapped as Si-D bond and trapped as C/N/O-D bond, respectively. The retention enhancement of deuterium trapped by Si as Si-D bond and the reduction of deuterium trapped on the surface would be associated with the enhancement of covalent bond characteristics for Si related ceramics. These results indicate that the dangling bonds in the covalent ceramics have higher hydrogen isotope trapping efficiency to form chemical bond like Si-D bond. On the other hand, the surface adsorption of hydrogen isotope was enhanced for the higher ionicity ceramics by charge localization.
AB - Hydrogen isotope retention and desorption behaviors for Silicon carbide (SiC), Silicon nitride (Si3N4) and Silicon dioxide (SiO2) were studied to elucidate the fundamental process of hydrogen isotope in Si related ceramics by means of T-IP (tritium imaging plate), thermal desorption spectroscopy (TDS) and X-ray photoelectron spectroscopy (XPS). The tritium gas exposure at 673 K showed that tritium was precipitated on the surface for SiO2, although that for SiC was uniformly retained inside the bulk. The 0.2 keV D2+ implantation revealed that the deuterium desorption stages for Si related ceramics were consisted of four desorption stages at around 450 K, 650 K, 800 K, and 950 K, attributing to the desorptions of deuterium trapped on the surface, retained in interstitial sites, trapped as Si-D bond and trapped as C/N/O-D bond, respectively. The retention enhancement of deuterium trapped by Si as Si-D bond and the reduction of deuterium trapped on the surface would be associated with the enhancement of covalent bond characteristics for Si related ceramics. These results indicate that the dangling bonds in the covalent ceramics have higher hydrogen isotope trapping efficiency to form chemical bond like Si-D bond. On the other hand, the surface adsorption of hydrogen isotope was enhanced for the higher ionicity ceramics by charge localization.
UR - http://www.scopus.com/inward/record.url?scp=84875741037&partnerID=8YFLogxK
U2 - 10.1016/j.jnucmat.2013.03.001
DO - 10.1016/j.jnucmat.2013.03.001
M3 - 学術論文
AN - SCOPUS:84875741037
SN - 0022-3115
VL - 438
SP - 22
EP - 25
JO - Journal of Nuclear Materials
JF - Journal of Nuclear Materials
IS - 1-3
ER -