Retention and desorption behavior of tritium in Si related ceramics

Yasuhisa Oya*, Yuji Hatano, Masanori Hara, Masao Matsuyama, Kenji Okuno

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Hydrogen isotope retention and desorption behaviors for Silicon carbide (SiC), Silicon nitride (Si3N4) and Silicon dioxide (SiO2) were studied to elucidate the fundamental process of hydrogen isotope in Si related ceramics by means of T-IP (tritium imaging plate), thermal desorption spectroscopy (TDS) and X-ray photoelectron spectroscopy (XPS). The tritium gas exposure at 673 K showed that tritium was precipitated on the surface for SiO2, although that for SiC was uniformly retained inside the bulk. The 0.2 keV D2+ implantation revealed that the deuterium desorption stages for Si related ceramics were consisted of four desorption stages at around 450 K, 650 K, 800 K, and 950 K, attributing to the desorptions of deuterium trapped on the surface, retained in interstitial sites, trapped as Si-D bond and trapped as C/N/O-D bond, respectively. The retention enhancement of deuterium trapped by Si as Si-D bond and the reduction of deuterium trapped on the surface would be associated with the enhancement of covalent bond characteristics for Si related ceramics. These results indicate that the dangling bonds in the covalent ceramics have higher hydrogen isotope trapping efficiency to form chemical bond like Si-D bond. On the other hand, the surface adsorption of hydrogen isotope was enhanced for the higher ionicity ceramics by charge localization.

Original languageEnglish
Pages (from-to)22-25
Number of pages4
JournalJournal of Nuclear Materials
Volume438
Issue number1-3
DOIs
StatePublished - 2013

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • General Materials Science
  • Nuclear Energy and Engineering

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