Preparation of silicon carbide film by a plasma focus device

Silicon carbide (SiC) films were grown on the silicon (100) substrate by a 20 kJ Mather-type dense plasma focus device. The preparation method and characterization data are presented. X-ray diffractometer (XRD), Fourier transform infrared spectroscopy (FTIR), field-emission scanning electron microscopy (SEM) and nano-indentor were employed for the characterization of the samples obtained at different axial position of 50 mm, 90 mm, 130 mm and 170 mm, respectively. Polycrystalline 3C{single bond}SiC were obtained at the position of 90 mm and 130 mm from XRD and FTIR spectra. SEM image showed that the silicon carbide films obtained at the position of 90 mm are porous on surface layer. Nano-indentor indicates that the film obtained at the position of 130 mm has the highest mechanical hardness.