Physical properties of (BMDT-TTF)3AsF6(1,1,2-trichloroethane)

N. Yoneyama; A. Miyazaki; T. Enoki

doi:10.1016/S0379-6779(98)00936-9

Physical properties of (BMDT-TTF)₃AsF₆(1,1,2-trichloroethane)

N. Yoneyama^*, A. Miyazaki, T. Enoki

^*Corresponding author for this work

Applied Chemistry

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

(BMDT-TTF)₃AsF₆(1,1,2-trichloroethane) featured with weakly trimerized BMDT-TTF units shows semiconductive resistivity behavior with a discontinuous change of a phase transition at 220K. The susceptibility described with a localized spin (s= 1/2 ) per trimer shows a broad maximum of magnetic short-range ordering around 12K, while the thermoelectric power is temperature-independent ranging 70μV/K. These features of strongly-correlated-electron system is discussed in terms of donor trimers.

Original language	English
Pages (from-to)	2008-2009
Number of pages	2
Journal	Synthetic Metals
Volume	103
Issue number	1-3
DOIs	https://doi.org/10.1016/S0379-6779(98)00936-9
State	Published - 1999/06/24
Event	Proceedings of the 1998 International Conference on Science and Technology of Synthetic Metals (ICSM-98) - Montpellier Duration: 1998/07/12 → 1998/07/18

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0379-6779(98)00936-9

Cite this

@article{da70ac8653ab4422bc287e731e3aaad8,

title = "Physical properties of (BMDT-TTF)3AsF6(1,1,2-trichloroethane)",

abstract = "(BMDT-TTF)3AsF6(1,1,2-trichloroethane) featured with weakly trimerized BMDT-TTF units shows semiconductive resistivity behavior with a discontinuous change of a phase transition at 220K. The susceptibility described with a localized spin (s= 1/2 ) per trimer shows a broad maximum of magnetic short-range ordering around 12K, while the thermoelectric power is temperature-independent ranging 70μV/K. These features of strongly-correlated-electron system is discussed in terms of donor trimers.",

author = "N. Yoneyama and A. Miyazaki and T. Enoki",

year = "1999",

month = jun,

day = "24",

doi = "10.1016/S0379-6779(98)00936-9",

language = "英語",

volume = "103",

pages = "2008--2009",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier B.V.",

number = "1-3",

note = "Proceedings of the 1998 International Conference on Science and Technology of Synthetic Metals (ICSM-98) ; Conference date: 12-07-1998 Through 18-07-1998",

}

TY - JOUR

T1 - Physical properties of (BMDT-TTF)3AsF6(1,1,2-trichloroethane)

AU - Yoneyama, N.

AU - Miyazaki, A.

AU - Enoki, T.

PY - 1999/6/24

Y1 - 1999/6/24

N2 - (BMDT-TTF)3AsF6(1,1,2-trichloroethane) featured with weakly trimerized BMDT-TTF units shows semiconductive resistivity behavior with a discontinuous change of a phase transition at 220K. The susceptibility described with a localized spin (s= 1/2 ) per trimer shows a broad maximum of magnetic short-range ordering around 12K, while the thermoelectric power is temperature-independent ranging 70μV/K. These features of strongly-correlated-electron system is discussed in terms of donor trimers.

AB - (BMDT-TTF)3AsF6(1,1,2-trichloroethane) featured with weakly trimerized BMDT-TTF units shows semiconductive resistivity behavior with a discontinuous change of a phase transition at 220K. The susceptibility described with a localized spin (s= 1/2 ) per trimer shows a broad maximum of magnetic short-range ordering around 12K, while the thermoelectric power is temperature-independent ranging 70μV/K. These features of strongly-correlated-electron system is discussed in terms of donor trimers.

UR - http://www.scopus.com/inward/record.url?scp=0033138220&partnerID=8YFLogxK

U2 - 10.1016/S0379-6779(98)00936-9

DO - 10.1016/S0379-6779(98)00936-9

M3 - 会議記事

AN - SCOPUS:0033138220

SN - 0379-6779

VL - 103

SP - 2008

EP - 2009

JO - Synthetic Metals

JF - Synthetic Metals

IS - 1-3

T2 - Proceedings of the 1998 International Conference on Science and Technology of Synthetic Metals (ICSM-98)

Y2 - 12 July 1998 through 18 July 1998