Performance of large-area silicon strip sensors for GLAST

S. Yoshida; H. Masuda; T. Ohsugi; Y. Fukazawa; K. Yamanaka; H. F.W. Sadrozinski; T. Handa; A. Kavelaars; A. Brez; R. Bellazzini; L. Latronico; K. Yamamura; K. Yamamoto; K. Sato

doi:10.1109/TNS.2002.1039607

Performance of large-area silicon strip sensors for GLAST

S. Yoshida^*, H. Masuda, T. Ohsugi, Y. Fukazawa, K. Yamanaka, H. F.W. Sadrozinski, T. Handa, A. Kavelaars, A. Brez, R. Bellazzini, L. Latronico, K. Yamamura, K. Yamamoto, K. Sato

^*Corresponding author for this work

Faculty of Liberal Arts and Sciences

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We report on the performance of silicon strip sensors for GLAST, produced by Hamamatsu Photonics, Japan. The size of the sensors is 89.5 × 89.5 mm². They were processed on 6-in-high resistivity wafers. By now, more than 1000 of ultimately 11 500 sensors have been produced, and 622 have been investigated in detail. The average leakage current density is only 3.4 nA/cm² at 25°C. Such a low leakage current density enables us to screen out a sensor having few strips with high leakage current by looking at the total sensor leakage current instead of measuring individual strip currents. High breakdown voltage is also achieved. Of ten sensors investigated for high-voltage breakdown, all hold bias voltage up to 500 V without significant increase in the leakage current. The faulty strip rate is about 0.01% of 240 000 strips tested.

Original language	English
Pages (from-to)	1017-1021
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	49 II
Issue number	3
DOIs	https://doi.org/10.1109/TNS.2002.1039607
State	Published - 2002/06

Keywords

GLAST
Radiation damage
Silicon strip detector

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2002.1039607

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@article{340c33fc757a4a978b6e10946df12adc,

title = "Performance of large-area silicon strip sensors for GLAST",

abstract = "We report on the performance of silicon strip sensors for GLAST, produced by Hamamatsu Photonics, Japan. The size of the sensors is 89.5 × 89.5 mm2. They were processed on 6-in-high resistivity wafers. By now, more than 1000 of ultimately 11 500 sensors have been produced, and 622 have been investigated in detail. The average leakage current density is only 3.4 nA/cm2 at 25°C. Such a low leakage current density enables us to screen out a sensor having few strips with high leakage current by looking at the total sensor leakage current instead of measuring individual strip currents. High breakdown voltage is also achieved. Of ten sensors investigated for high-voltage breakdown, all hold bias voltage up to 500 V without significant increase in the leakage current. The faulty strip rate is about 0.01% of 240 000 strips tested.",

keywords = "GLAST, Radiation damage, Silicon strip detector",

author = "S. Yoshida and H. Masuda and T. Ohsugi and Y. Fukazawa and K. Yamanaka and Sadrozinski, {H. F.W.} and T. Handa and A. Kavelaars and A. Brez and R. Bellazzini and L. Latronico and K. Yamamura and K. Yamamoto and K. Sato",

year = "2002",

month = jun,

doi = "10.1109/TNS.2002.1039607",

language = "英語",

volume = "49 II",

pages = "1017--1021",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Performance of large-area silicon strip sensors for GLAST

AU - Yoshida, S.

AU - Masuda, H.

AU - Ohsugi, T.

AU - Fukazawa, Y.

AU - Yamanaka, K.

AU - Sadrozinski, H. F.W.

AU - Handa, T.

AU - Kavelaars, A.

AU - Brez, A.

AU - Bellazzini, R.

AU - Latronico, L.

AU - Yamamura, K.

AU - Yamamoto, K.

AU - Sato, K.

PY - 2002/6

Y1 - 2002/6

N2 - We report on the performance of silicon strip sensors for GLAST, produced by Hamamatsu Photonics, Japan. The size of the sensors is 89.5 × 89.5 mm2. They were processed on 6-in-high resistivity wafers. By now, more than 1000 of ultimately 11 500 sensors have been produced, and 622 have been investigated in detail. The average leakage current density is only 3.4 nA/cm2 at 25°C. Such a low leakage current density enables us to screen out a sensor having few strips with high leakage current by looking at the total sensor leakage current instead of measuring individual strip currents. High breakdown voltage is also achieved. Of ten sensors investigated for high-voltage breakdown, all hold bias voltage up to 500 V without significant increase in the leakage current. The faulty strip rate is about 0.01% of 240 000 strips tested.

AB - We report on the performance of silicon strip sensors for GLAST, produced by Hamamatsu Photonics, Japan. The size of the sensors is 89.5 × 89.5 mm2. They were processed on 6-in-high resistivity wafers. By now, more than 1000 of ultimately 11 500 sensors have been produced, and 622 have been investigated in detail. The average leakage current density is only 3.4 nA/cm2 at 25°C. Such a low leakage current density enables us to screen out a sensor having few strips with high leakage current by looking at the total sensor leakage current instead of measuring individual strip currents. High breakdown voltage is also achieved. Of ten sensors investigated for high-voltage breakdown, all hold bias voltage up to 500 V without significant increase in the leakage current. The faulty strip rate is about 0.01% of 240 000 strips tested.

KW - GLAST

KW - Radiation damage

KW - Silicon strip detector

UR - http://www.scopus.com/inward/record.url?scp=0036624373&partnerID=8YFLogxK

U2 - 10.1109/TNS.2002.1039607

DO - 10.1109/TNS.2002.1039607

M3 - 学術論文

AN - SCOPUS:0036624373

SN - 0018-9499

VL - 49 II

SP - 1017

EP - 1021

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 3

ER -

Performance of large-area silicon strip sensors for GLAST

Abstract

Keywords

ASJC Scopus subject areas

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