Performance of large area silicon strip sensors for GLAST

S. Yoshida; H. Masuda; T. Ohsugi; Y. Fukazawa; K. Yamanaka; H. F.W. Sadrozinski; T. Handa; A. Kavelaars; A. Brez; R. Bellazzini; L. Latronico; K. Yamamura; K. Yamamoto; K. Sato

Performance of large area silicon strip sensors for GLAST

S. Yoshida^*, H. Masuda, T. Ohsugi, Y. Fukazawa, K. Yamanaka, H. F.W. Sadrozinski, T. Handa, A. Kavelaars, A. Brez, R. Bellazzini, L. Latronico, K. Yamamura, K. Yamamoto, K. Sato

^*Corresponding author for this work

Faculty of Liberal Arts and Sciences

Research output: Contribution to conference › Paper › peer-review

Abstract

We report on the performance of silicon strip sensors for GLAST, produced by Hamamatsu Photonics, Japan. The size of the sensors is 89.5mm × 89.5mm and they were processed on 6 inch high resistivity wafers. By now, over 1,000 of ultimately 11,500 sensors have been produced and 619 have been investigated in detail. The average leakage current is only 2 nA/cm² at 25°C. Such a low leakage current enables us to screen out a sensor having few channels with high leakage current by looking at the total sensor leakage current, instead of measuring individual strip currents. High breakdown voltage is also achieved. Most of the sensor can hold bias voltage up to 500V without significant increase of leakage current. The bad channel rate is about 0.01% over 240k channels.

Original language	English
Pages	180-184
Number of pages	5
State	Published - 2001
Event	2001 IEEE Nuclear Science Symposium Conference Record - San Diege, CA, United States Duration: 2001/11/04 → 2001/11/10

Conference

Conference	2001 IEEE Nuclear Science Symposium Conference Record
Country/Territory	United States
City	San Diege, CA
Period	2001/11/04 → 2001/11/10

ASJC Scopus subject areas

Radiation
Nuclear and High Energy Physics
Radiology Nuclear Medicine and imaging

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Yoshida, S., Masuda, H., Ohsugi, T., Fukazawa, Y., Yamanaka, K., Sadrozinski, H. F. W., Handa, T., Kavelaars, A., Brez, A., Bellazzini, R., Latronico, L., Yamamura, K., Yamamoto, K., & Sato, K. (2001). Performance of large area silicon strip sensors for GLAST. 180-184. Paper presented at 2001 IEEE Nuclear Science Symposium Conference Record, San Diege, CA, United States.

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title = "Performance of large area silicon strip sensors for GLAST",

abstract = "We report on the performance of silicon strip sensors for GLAST, produced by Hamamatsu Photonics, Japan. The size of the sensors is 89.5mm × 89.5mm and they were processed on 6 inch high resistivity wafers. By now, over 1,000 of ultimately 11,500 sensors have been produced and 619 have been investigated in detail. The average leakage current is only 2 nA/cm2 at 25°C. Such a low leakage current enables us to screen out a sensor having few channels with high leakage current by looking at the total sensor leakage current, instead of measuring individual strip currents. High breakdown voltage is also achieved. Most of the sensor can hold bias voltage up to 500V without significant increase of leakage current. The bad channel rate is about 0.01% over 240k channels.",

author = "S. Yoshida and H. Masuda and T. Ohsugi and Y. Fukazawa and K. Yamanaka and Sadrozinski, {H. F.W.} and T. Handa and A. Kavelaars and A. Brez and R. Bellazzini and L. Latronico and K. Yamamura and K. Yamamoto and K. Sato",

year = "2001",

language = "英語",

pages = "180--184",

note = "2001 IEEE Nuclear Science Symposium Conference Record ; Conference date: 04-11-2001 Through 10-11-2001",

}

Yoshida, S, Masuda, H, Ohsugi, T, Fukazawa, Y, Yamanaka, K, Sadrozinski, HFW, Handa, T, Kavelaars, A, Brez, A, Bellazzini, R, Latronico, L, Yamamura, K, Yamamoto, K & Sato, K 2001, 'Performance of large area silicon strip sensors for GLAST', Paper presented at 2001 IEEE Nuclear Science Symposium Conference Record, San Diege, CA, United States, 2001/11/04 - 2001/11/10 pp. 180-184.

TY - CONF

T1 - Performance of large area silicon strip sensors for GLAST

AU - Yoshida, S.

AU - Masuda, H.

AU - Ohsugi, T.

AU - Fukazawa, Y.

AU - Yamanaka, K.

AU - Sadrozinski, H. F.W.

AU - Handa, T.

AU - Kavelaars, A.

AU - Brez, A.

AU - Bellazzini, R.

AU - Latronico, L.

AU - Yamamura, K.

AU - Yamamoto, K.

AU - Sato, K.

PY - 2001

Y1 - 2001

N2 - We report on the performance of silicon strip sensors for GLAST, produced by Hamamatsu Photonics, Japan. The size of the sensors is 89.5mm × 89.5mm and they were processed on 6 inch high resistivity wafers. By now, over 1,000 of ultimately 11,500 sensors have been produced and 619 have been investigated in detail. The average leakage current is only 2 nA/cm2 at 25°C. Such a low leakage current enables us to screen out a sensor having few channels with high leakage current by looking at the total sensor leakage current, instead of measuring individual strip currents. High breakdown voltage is also achieved. Most of the sensor can hold bias voltage up to 500V without significant increase of leakage current. The bad channel rate is about 0.01% over 240k channels.

AB - We report on the performance of silicon strip sensors for GLAST, produced by Hamamatsu Photonics, Japan. The size of the sensors is 89.5mm × 89.5mm and they were processed on 6 inch high resistivity wafers. By now, over 1,000 of ultimately 11,500 sensors have been produced and 619 have been investigated in detail. The average leakage current is only 2 nA/cm2 at 25°C. Such a low leakage current enables us to screen out a sensor having few channels with high leakage current by looking at the total sensor leakage current, instead of measuring individual strip currents. High breakdown voltage is also achieved. Most of the sensor can hold bias voltage up to 500V without significant increase of leakage current. The bad channel rate is about 0.01% over 240k channels.

UR - http://www.scopus.com/inward/record.url?scp=0035553302&partnerID=8YFLogxK

M3 - 学会論文

AN - SCOPUS:0035553302

SP - 180

EP - 184

T2 - 2001 IEEE Nuclear Science Symposium Conference Record

Y2 - 4 November 2001 through 10 November 2001

ER -

Performance of large area silicon strip sensors for GLAST

Abstract

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ASJC Scopus subject areas

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