Abstract
Fabrication processes of Pt/GaAs Schottky diodes have been studied for obtaining submillimeter wave detector/mixers with high performance. We have been studying and fabricating dot-matrix Pt/GaAs Schottky diodes which have advantages of high speed responsivity and room temperature operation. Noise characteristic of the diode is one of the important measure for the submillimeter wave detector/mixers. The noise characteristics are influenced by defects localized near Pt/GaAs interface, which defects are introduced in processes of wet etching, chemical surface treatments, reactive ion etching and deposition of Si02 insulating layer. We have measured the diode noise characteristics, as the diode temperature was changed. Effects of chemical processes, composition of GaAs surface, damages by Si02 sputtering on the diode noise have been measured.
| Original language | English |
|---|---|
| Article number | 15766L |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 1576 |
| DOIs | |
| State | Published - 1991 |
| Event | 16th International Conference on Infrared and Millimeter Waves 1991 - Lausanne, Switzerland Duration: 1991/08/26 → 1991/08/30 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering