Abstract
In this paper, a threshold voltage (VT) cancellation circuit for neuron-MOS (νMOS) analog circuits is described. By connecting the output terminal of this circuit with one of the input terminals of the νMOS transistor, cancellation of VT is realized. The circuit has advantages of ground-referenced output and is insensitive to the fluctuation of bias and supply voltages. Second-order effects, such as the channel length modulation effect, the mobility reduction effect and device mismatch of the proposed circuit are analyzed in detail. Low-power and high-swing νMOS cascode current mirror is presented as an application. Performance of the proposed circuits is confirmed by HSPICE simulation with MOSIS 2.0 μ p-well double-poly and double-metal CMOS device parameters.
| Original language | English |
|---|---|
| Pages (from-to) | 110-116 |
| Number of pages | 7 |
| Journal | IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences |
| Volume | E81-A |
| Issue number | 1 |
| State | Published - 1998/01 |
ASJC Scopus subject areas
- Signal Processing
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering
- Applied Mathematics