Mobility enhancement of top contact pentacene based organic thin film transistor with bi-layer GeO/Au electrodes

Mir Waqas Alam; Zhaokui Wang; Shigeki Naka; Hiroyuki Okada

doi:10.1063/1.4792235

Mobility enhancement of top contact pentacene based organic thin film transistor with bi-layer GeO/Au electrodes

Mir Waqas Alam^*, Zhaokui Wang, Shigeki Naka, Hiroyuki Okada

^*Corresponding author for this work

Electric and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

The enhancement of the charge injection and field effect mobility by inserting a thin (5 nm) germanium oxide (GeO) interlayer between the Au electrode and pentacene layer in a top contact pentacene based organic thin-film transistor (OTFTs) was reported. In comparison with the pentacene-based OTFT with only-Au electrode, the device performance has been considerably improved, which exhibits the highest field effect mobility of 0.96 cm²/Vs. The improvement was attributed to significant reduction of barrier height at Au/pentacene interfaces and smoothed surface of pentacene layer after inserting a thin GeO layer.

Original language	English
Article number	061105
Journal	Applied Physics Letters
Volume	102
Issue number	6
DOIs	https://doi.org/10.1063/1.4792235
State	Published - 2013/02/11

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Mobility enhancement of top contact pentacene based organic thin film transistor with bi-layer GeO/Au electrodes",

abstract = "The enhancement of the charge injection and field effect mobility by inserting a thin (5 nm) germanium oxide (GeO) interlayer between the Au electrode and pentacene layer in a top contact pentacene based organic thin-film transistor (OTFTs) was reported. In comparison with the pentacene-based OTFT with only-Au electrode, the device performance has been considerably improved, which exhibits the highest field effect mobility of 0.96 cm2/Vs. The improvement was attributed to significant reduction of barrier height at Au/pentacene interfaces and smoothed surface of pentacene layer after inserting a thin GeO layer.",

author = "{Waqas Alam}, Mir and Zhaokui Wang and Shigeki Naka and Hiroyuki Okada",

year = "2013",

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T1 - Mobility enhancement of top contact pentacene based organic thin film transistor with bi-layer GeO/Au electrodes

AU - Waqas Alam, Mir

AU - Wang, Zhaokui

AU - Naka, Shigeki

AU - Okada, Hiroyuki

PY - 2013/2/11

Y1 - 2013/2/11

N2 - The enhancement of the charge injection and field effect mobility by inserting a thin (5 nm) germanium oxide (GeO) interlayer between the Au electrode and pentacene layer in a top contact pentacene based organic thin-film transistor (OTFTs) was reported. In comparison with the pentacene-based OTFT with only-Au electrode, the device performance has been considerably improved, which exhibits the highest field effect mobility of 0.96 cm2/Vs. The improvement was attributed to significant reduction of barrier height at Au/pentacene interfaces and smoothed surface of pentacene layer after inserting a thin GeO layer.

AB - The enhancement of the charge injection and field effect mobility by inserting a thin (5 nm) germanium oxide (GeO) interlayer between the Au electrode and pentacene layer in a top contact pentacene based organic thin-film transistor (OTFTs) was reported. In comparison with the pentacene-based OTFT with only-Au electrode, the device performance has been considerably improved, which exhibits the highest field effect mobility of 0.96 cm2/Vs. The improvement was attributed to significant reduction of barrier height at Au/pentacene interfaces and smoothed surface of pentacene layer after inserting a thin GeO layer.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Mobility enhancement of top contact pentacene based organic thin film transistor with bi-layer GeO/Au electrodes

Abstract

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