Abstract
Magnetoresistance of ordered crystal GdNiSn has been observed and tried to analyze by the use of magnetization data. No clear effect on the magnetization data is found at the phase-transition fields. But the magnetoresistance and differential magnetization data show the clear change made by the field-induced phase transition. Besides the important role of the spin stability on the resistance, the residual resisivity can have a different values on each phase because of the different matrix elements between its collective and nonmagnetic impurity states.
Original language | English |
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Pages (from-to) | 1089-1090 |
Number of pages | 2 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 177-181 |
Issue number | PART 2 |
DOIs | |
State | Published - 1998/01 |
Keywords
- Magnetization - high field
- Magnetoresistance - ternary compounds
- Phase transitions
- Spin fluctuation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics