Magnetoresistance and magnetization measurements in magnetically ordered GdNiSn

A. Oki, H. Hori*, N. Nunomura, M. Kurisu, M. Furusawa, S. Yamada, Y. Andoh, S. Mitsudo, M. Motokawa, K. Kindo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Magnetoresistance of ordered crystal GdNiSn has been observed and tried to analyze by the use of magnetization data. No clear effect on the magnetization data is found at the phase-transition fields. But the magnetoresistance and differential magnetization data show the clear change made by the field-induced phase transition. Besides the important role of the spin stability on the resistance, the residual resisivity can have a different values on each phase because of the different matrix elements between its collective and nonmagnetic impurity states.

Original languageEnglish
Pages (from-to)1089-1090
Number of pages2
JournalJournal of Magnetism and Magnetic Materials
Volume177-181
Issue numberPART 2
DOIs
StatePublished - 1998/01

Keywords

  • Magnetization - high field
  • Magnetoresistance - ternary compounds
  • Phase transitions
  • Spin fluctuation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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