Low temperature magnetic properties of Ce3Pd20Si 6

Hiroyuki Mitamura*, Takashi Tayama, Toshiro Sakakibara, Seiji Tsuduku, Genki Ano, Isao Ishii, Mitsuhiro Akatsu, Yuichi Nemoto, Terutaka Goto, Akiko Kikkawa, Hideaki Kitazawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Magnetization of a single crystalline Ce3Pd20Si 6 was measured at low temperatures down to 90mK in fields up to 11 T for the three principal directions [100], [110], and [111]. For all directions, two transitions were observed in the temperature variation of the magnetization M(T) at 0.2 T; a broad peak at 0.28K associated with a phase-III transition, and an upward bending at ∼0:5K due to a phase-II ordering from the paramagnetic state (phase-I). The latter critical temperature TI-II is found to be strongly enhanced in magnetic fields B, depending on the field direction, and TI-II(B) becomes highly anisotropic. These results suggest that phase-II is an antiferroquadrupole state originated from a Γ8 ground state. By contrast, no appreciable anisotropy is found in the phase-III state. At 90 mK, phase-III collapses by applying a field of ∼0:63 T for all directions. Above this field, the magnetization curve M(B) becomes strongly anisotropic. The magnetization value per Ce in the phase-I region at 90mK is apparently smaller than the Γ8 moment, indicating that either 8c or 4a site has a Γ7 ground state.

Original languageEnglish
Article number074712
JournalJournal of the Physical Society of Japan
Volume79
Issue number7
DOIs
StatePublished - 2010/07

Keywords

  • Antiferroquadrupole transition
  • CePdSi
  • Magnetic phase diagram
  • Magnetization

ASJC Scopus subject areas

  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'Low temperature magnetic properties of Ce3Pd20Si 6'. Together they form a unique fingerprint.

Cite this