Low resistance ohmic contacts to n-InSb employing Sn-alloys

K. Hosotani; T. Ito; Y. Yasui; K. Nakayama; A. Kadoda; M. Mori; K. Maezawa

doi:10.1109/IMFEDK.2013.6602246

Low resistance ohmic contacts to n-InSb employing Sn-alloys

K. Hosotani, T. Ito, Y. Yasui, K. Nakayama, A. Kadoda, M. Mori, K. Maezawa

Electric and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper discusses ohmic contact formation of Sn-based alloys on n-InSb. Most critical problem, we encountered when using a Sn/Au/Ni/Ti/Au metal stack, is an anomalous alloy extension of the ohmic metal. This was found to be resulted from rapid diffusion of Au. It is demonstrated that by removing the Au under the Ti barrier layer good contact resistance of less than 0.1 mm can be obtained without anomalous alloy extension.

Original language	English
Title of host publication	IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai
Pages	72-73
Number of pages	2
DOIs	https://doi.org/10.1109/IMFEDK.2013.6602246
State	Published - 2013
Event	2013 11th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2013 - Osaka, Japan Duration: 2013/06/05 → 2013/06/06

Publication series

Name	IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai

Conference

Conference	2013 11th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2013
Country/Territory	Japan
City	Osaka
Period	2013/06/05 → 2013/06/06

Keywords

InSb
MOSFET
Sn-alloy
energy dispersive X-ray spectrometry
ohmic contact

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IMFEDK.2013.6602246

Cite this

Hosotani, K., Ito, T., Yasui, Y., Nakayama, K., Kadoda, A., Mori, M., & Maezawa, K. (2013). Low resistance ohmic contacts to n-InSb employing Sn-alloys. In IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai (pp. 72-73). Article 6602246 (IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai). https://doi.org/10.1109/IMFEDK.2013.6602246

@inproceedings{d5e3e16050004fd8ba8a8c3a76318ca0,

title = "Low resistance ohmic contacts to n-InSb employing Sn-alloys",

abstract = "This paper discusses ohmic contact formation of Sn-based alloys on n-InSb. Most critical problem, we encountered when using a Sn/Au/Ni/Ti/Au metal stack, is an anomalous alloy extension of the ohmic metal. This was found to be resulted from rapid diffusion of Au. It is demonstrated that by removing the Au under the Ti barrier layer good contact resistance of less than 0.1 mm can be obtained without anomalous alloy extension.",

keywords = "InSb, MOSFET, Sn-alloy, energy dispersive X-ray spectrometry, ohmic contact",

author = "K. Hosotani and T. Ito and Y. Yasui and K. Nakayama and A. Kadoda and M. Mori and K. Maezawa",

year = "2013",

doi = "10.1109/IMFEDK.2013.6602246",

language = "英語",

isbn = "9781467361064",

series = "IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai",

pages = "72--73",

booktitle = "IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai",

note = "2013 11th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2013 ; Conference date: 05-06-2013 Through 06-06-2013",

}

Hosotani, K, Ito, T, Yasui, Y, Nakayama, K, Kadoda, A, Mori, M & Maezawa, K 2013, Low resistance ohmic contacts to n-InSb employing Sn-alloys. in IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai., 6602246, IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai, pp. 72-73, 2013 11th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2013, Osaka, Japan, 2013/06/05. https://doi.org/10.1109/IMFEDK.2013.6602246

Low resistance ohmic contacts to n-InSb employing Sn-alloys. / Hosotani, K.; Ito, T.; Yasui, Y. et al.
IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai. 2013. p. 72-73 6602246 (IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low resistance ohmic contacts to n-InSb employing Sn-alloys

AU - Hosotani, K.

AU - Ito, T.

AU - Yasui, Y.

AU - Nakayama, K.

AU - Kadoda, A.

AU - Mori, M.

AU - Maezawa, K.

PY - 2013

Y1 - 2013

N2 - This paper discusses ohmic contact formation of Sn-based alloys on n-InSb. Most critical problem, we encountered when using a Sn/Au/Ni/Ti/Au metal stack, is an anomalous alloy extension of the ohmic metal. This was found to be resulted from rapid diffusion of Au. It is demonstrated that by removing the Au under the Ti barrier layer good contact resistance of less than 0.1 mm can be obtained without anomalous alloy extension.

AB - This paper discusses ohmic contact formation of Sn-based alloys on n-InSb. Most critical problem, we encountered when using a Sn/Au/Ni/Ti/Au metal stack, is an anomalous alloy extension of the ohmic metal. This was found to be resulted from rapid diffusion of Au. It is demonstrated that by removing the Au under the Ti barrier layer good contact resistance of less than 0.1 mm can be obtained without anomalous alloy extension.

KW - InSb

KW - MOSFET

KW - Sn-alloy

KW - energy dispersive X-ray spectrometry

KW - ohmic contact

UR - http://www.scopus.com/inward/record.url?scp=84885589320&partnerID=8YFLogxK

U2 - 10.1109/IMFEDK.2013.6602246

DO - 10.1109/IMFEDK.2013.6602246

M3 - 会議への寄与

AN - SCOPUS:84885589320

SN - 9781467361064

T3 - IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai

SP - 72

EP - 73

BT - IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai

T2 - 2013 11th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2013

Y2 - 5 June 2013 through 6 June 2013

ER -

Low resistance ohmic contacts to n-InSb employing Sn-alloys

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Fingerprint

Cite this