Abstract
The performance of the fabricated QLED (Quantum dot Light Emitting Diode) was measured, using the sputtered ZnO film. The thickness of the ZnO film was varied to control the electron mobility. Consequently, the maximum current efficiency of 3.96 cd/A, and EQE 2.13% was achieved for the commercially available ZnCuInS/ZnS based QLEDs at yellow emission.
| Original language | English |
|---|---|
| Pages (from-to) | 427-428 |
| Number of pages | 2 |
| Journal | Proceedings of the International Display Workshops |
| Volume | 27 |
| State | Published - 2021/12/09 |
| Event | 27th International Display Workshops, IDW 2020 - Virtual, Online Duration: 2020/12/09 → 2020/12/11 |
Keywords
- Cadmium-free quantum dot light emitting diodes (QLED)
- Inverted structure
- Quantum yield (QY)
- Sputtered Zinc Oxide
ASJC Scopus subject areas
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials