InSb films grown on the V-grooved Si(001) substrate with InSb bilayer

V-shaped grooves were prepared by patterning of line and space (LS) using photolithography and Reactive Ion Etching (RIE), and anisotropic etching using hot KOH solution on the patterned 100 nm- SiO₂/Si(001) substrate. The V-shaped grooves consist of two 〈 111 〉 planes. The width of grooves was varied from 1 to 10 μm while keeping intervals (line-shaped spaces) between the grooves. The InSb bi-layer was prepared onto the 〈 111 〉 surfaces and the heteroepitaxial growth of InSb films was performed using two-step growth procedure via the InSb bi-layer. Compared with the samples directly grown on the V-grooved Si(001) substrate, the samples grown via the InSb bi-layer showed higher crystal quality. The weak InSb(004) peak was observed in the 2 θ / ω scan at χ = 0^o, indicating the 〈 001 〉 planes of the InSb films don't face toward to the normal direction of Si(001) substrate. This means that the InSb films grown via InSb bi-layer rotate by 30^{{ring operator}} with respect to the 〈 111 〉 surfaces of the V-shaped grooves. The confirmation of the rotated InSb(111) peak was difficult, because the incident and diffracted X-ray were obstructed by the grooves. The full width at half maximum (FWHM) of the InSb(111) peak in the 2 θ / ω scan at χ = 54 . 7^{{ring operator}} became broader with decrease in the space width between the line-shaped 〈 001 〉 surfaces. This may be related to the areal ratio of the line-shaped 〈 001 〉 surfaces, on which the InSb bi-layer don't form under the present growth condition.