Influence of total gas pressure on the microstructure and properties of CrAlN films deposited by a pulsed DC balanced magnetron sputtering system

S. Khamseh; M. Nose; T. Kawabata; K. Matsuda; S. Ikeno

doi:10.1016/j.jallcom.2010.04.145

Influence of total gas pressure on the microstructure and properties of CrAlN films deposited by a pulsed DC balanced magnetron sputtering system

S. Khamseh^*, M. Nose, T. Kawabata, K. Matsuda, S. Ikeno

^*Corresponding author for this work

Materials Design and Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

CrAlN films have been prepared using a pulsed DC reactive sputtering system. The effects of N₂/Ar ratio and pulse width on the film's structure and properties have been investigated. The total sputtering pressure decreased with increased N₂/Ar ratio. All CrAlN films showed NaCl-type CrN structure, while mixed structures of wurtzite-type Cr₂ N, wurtzite-type AlN and NaCl-type CrN phases formed in the films produced under lower sputtering pressure and higher pulse width. Increasing the sputtering pressure resulted in a decrease in the films internal stress. Moreover, the plastic hardness of the films prepared under different pulse widths was higher at the lower sputtering pressure.

Original language	English
Pages (from-to)	389-391
Number of pages	3
Journal	Journal of Alloys and Compounds
Volume	503
Issue number	2
DOIs	https://doi.org/10.1016/j.jallcom.2010.04.145
State	Published - 2010/07/23

Keywords

CrAlN film
Pulse width
Pulsed DC magnetron sputtering
Total sputtering pressure

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2010.04.145

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title = "Influence of total gas pressure on the microstructure and properties of CrAlN films deposited by a pulsed DC balanced magnetron sputtering system",

abstract = "CrAlN films have been prepared using a pulsed DC reactive sputtering system. The effects of N2/Ar ratio and pulse width on the film's structure and properties have been investigated. The total sputtering pressure decreased with increased N2/Ar ratio. All CrAlN films showed NaCl-type CrN structure, while mixed structures of wurtzite-type Cr2 N, wurtzite-type AlN and NaCl-type CrN phases formed in the films produced under lower sputtering pressure and higher pulse width. Increasing the sputtering pressure resulted in a decrease in the films internal stress. Moreover, the plastic hardness of the films prepared under different pulse widths was higher at the lower sputtering pressure.",

keywords = "CrAlN film, Pulse width, Pulsed DC magnetron sputtering, Total sputtering pressure",

author = "S. Khamseh and M. Nose and T. Kawabata and K. Matsuda and S. Ikeno",

note = "Funding Information: The authors wish to express their thanks for the financial support by a grant for scientific research from Japan Society for the Promotion of Science .",

year = "2010",

month = jul,

day = "23",

doi = "10.1016/j.jallcom.2010.04.145",

language = "英語",

volume = "503",

pages = "389--391",

journal = "Journal of Alloys and Compounds",

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T1 - Influence of total gas pressure on the microstructure and properties of CrAlN films deposited by a pulsed DC balanced magnetron sputtering system

AU - Khamseh, S.

AU - Nose, M.

AU - Kawabata, T.

AU - Matsuda, K.

AU - Ikeno, S.

N1 - Funding Information: The authors wish to express their thanks for the financial support by a grant for scientific research from Japan Society for the Promotion of Science .

PY - 2010/7/23

Y1 - 2010/7/23

N2 - CrAlN films have been prepared using a pulsed DC reactive sputtering system. The effects of N2/Ar ratio and pulse width on the film's structure and properties have been investigated. The total sputtering pressure decreased with increased N2/Ar ratio. All CrAlN films showed NaCl-type CrN structure, while mixed structures of wurtzite-type Cr2 N, wurtzite-type AlN and NaCl-type CrN phases formed in the films produced under lower sputtering pressure and higher pulse width. Increasing the sputtering pressure resulted in a decrease in the films internal stress. Moreover, the plastic hardness of the films prepared under different pulse widths was higher at the lower sputtering pressure.

AB - CrAlN films have been prepared using a pulsed DC reactive sputtering system. The effects of N2/Ar ratio and pulse width on the film's structure and properties have been investigated. The total sputtering pressure decreased with increased N2/Ar ratio. All CrAlN films showed NaCl-type CrN structure, while mixed structures of wurtzite-type Cr2 N, wurtzite-type AlN and NaCl-type CrN phases formed in the films produced under lower sputtering pressure and higher pulse width. Increasing the sputtering pressure resulted in a decrease in the films internal stress. Moreover, the plastic hardness of the films prepared under different pulse widths was higher at the lower sputtering pressure.

KW - CrAlN film

KW - Pulse width

KW - Pulsed DC magnetron sputtering

KW - Total sputtering pressure

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SN - 0925-8388

VL - 503

SP - 389

EP - 391

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 2

ER -

Influence of total gas pressure on the microstructure and properties of CrAlN films deposited by a pulsed DC balanced magnetron sputtering system

Abstract

Keywords

ASJC Scopus subject areas

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