HIGH-SPEED AMORPHOUS-SILICON DYNAMIC CIRCUIT.

H. Okada; Y. Nara; Y. Uchida; Y. Watanabe; M. Matsumura

HIGH-SPEED AMORPHOUS-SILICON DYNAMIC CIRCUIT.

H. Okada^*, Y. Nara, Y. Uchida, Y. Watanabe, M. Matsumura

^*Corresponding author for this work

Electric and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A novel dynamic circuit composed of amorphous-silicon Schottky-barrier diodes and field-effect transistors has been proposed. The circuit response time is as short as the discharging time of a load capacitor through the driver transistor. The circuit having 1 mu m-long, self-aligned transistors has been predicted theoretically to be able to be operated at multi-MHz rates. Experimental results are presented.

Original language	English
Title of host publication	Materials Research Society Symposia Proceedings
Publisher	Materials Research Soc
Pages	379-384
Number of pages	6
ISBN (Print)	0931837146
State	Published - 1985

Publication series

Name	Materials Research Society Symposia Proceedings
Volume	49
ISSN (Print)	0272-9172

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@inproceedings{1d34b9fb3baa47c89bc6c674db2d7bc4,

title = "HIGH-SPEED AMORPHOUS-SILICON DYNAMIC CIRCUIT.",

abstract = "A novel dynamic circuit composed of amorphous-silicon Schottky-barrier diodes and field-effect transistors has been proposed. The circuit response time is as short as the discharging time of a load capacitor through the driver transistor. The circuit having 1 mu m-long, self-aligned transistors has been predicted theoretically to be able to be operated at multi-MHz rates. Experimental results are presented.",

author = "H. Okada and Y. Nara and Y. Uchida and Y. Watanabe and M. Matsumura",

year = "1985",

language = "英語",

isbn = "0931837146",

series = "Materials Research Society Symposia Proceedings",

publisher = "Materials Research Soc",

pages = "379--384",

booktitle = "Materials Research Society Symposia Proceedings",

}

TY - GEN

T1 - HIGH-SPEED AMORPHOUS-SILICON DYNAMIC CIRCUIT.

AU - Okada, H.

AU - Nara, Y.

AU - Uchida, Y.

AU - Watanabe, Y.

AU - Matsumura, M.

PY - 1985

Y1 - 1985

N2 - A novel dynamic circuit composed of amorphous-silicon Schottky-barrier diodes and field-effect transistors has been proposed. The circuit response time is as short as the discharging time of a load capacitor through the driver transistor. The circuit having 1 mu m-long, self-aligned transistors has been predicted theoretically to be able to be operated at multi-MHz rates. Experimental results are presented.

AB - A novel dynamic circuit composed of amorphous-silicon Schottky-barrier diodes and field-effect transistors has been proposed. The circuit response time is as short as the discharging time of a load capacitor through the driver transistor. The circuit having 1 mu m-long, self-aligned transistors has been predicted theoretically to be able to be operated at multi-MHz rates. Experimental results are presented.

UR - http://www.scopus.com/inward/record.url?scp=0022324921&partnerID=8YFLogxK

M3 - 会議への寄与

AN - SCOPUS:0022324921

SN - 0931837146

T3 - Materials Research Society Symposia Proceedings

SP - 379

EP - 384

BT - Materials Research Society Symposia Proceedings

PB - Materials Research Soc

ER -

HIGH-SPEED AMORPHOUS-SILICON DYNAMIC CIRCUIT.

Abstract

Publication series

ASJC Scopus subject areas

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