Abstract
The In-Sb bi-layer (Si(111)-2x2-InSb surface reconstruction) was able to be prepared by 1 monolayer Sb adsorption onto Si(111)-√7x√3-In surface reconstruction, as well as results with 2x2-In and √3x√3-In. By using the √7x√3-In surface reconstruction with higher In coverage, the area covered in the In-Sb bi-layer increased, and the area covered by 2x1-Sb surface phase which caused by desorption of In atoms from In-Sb bi-layer decreased. The heteroepitaxial growth of InSb films on a Si(111)substrate via the In-Sb bi-layer was carried out by using two-step growth procedure. The grown InSb films rotated by 30° with respect to Si substrate. Due to the decrease of the area covered by the 2x1-Sb surface phase, the InSb crystals without rotation, which has poor crystal quality and electric properties, disappeared. Consequently, the electric properties of the films improved than those of the sample grown via 2x2-In.
| Original language | English |
|---|---|
| Pages (from-to) | 2772-2774 |
| Number of pages | 3 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 5 |
| Issue number | 9 |
| DOIs | |
| State | Published - 2008 |
| Event | 34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan Duration: 2007/10/15 → 2007/10/18 |
ASJC Scopus subject areas
- Condensed Matter Physics