Heteroepitaxial growth of InSb thin films on a Ge(111) substrate

T. Mitsueda; T. Sakamoto; H. Shimoyama; M. Mori; K. Maezawa

doi:10.1109/IMFEDK.2014.6867069

Heteroepitaxial growth of InSb thin films on a Ge(111) substrate

T. Mitsueda, T. Sakamoto, H. Shimoyama, M. Mori, K. Maezawa

Electric and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper discusses characteristics of the InSb films on Ge substrate. To grow high quality InSb films on Ge substrate, we tried to optimize the growth conditions. We carried out the direct growth of the InSb films on Ge(111) substrate by using two-step growth procedure. At first, we studied the effect of the growth temperature and thickness of the first layer.

Original language	English
Title of host publication	IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479936144
DOIs	https://doi.org/10.1109/IMFEDK.2014.6867069
State	Published - 2014/07/28
Event	12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014 - Kyoto, Japan Duration: 2014/06/19 → 2014/06/20

Publication series

Name	IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai

Conference

Conference	12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014
Country/Territory	Japan
City	Kyoto
Period	2014/06/19 → 2014/06/20

Keywords

Ge
Heteroepitaxial Growth
InSb

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IMFEDK.2014.6867069

Cite this

Mitsueda, T., Sakamoto, T., Shimoyama, H., Mori, M., & Maezawa, K. (2014). Heteroepitaxial growth of InSb thin films on a Ge(111) substrate. In IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai Article 6867069 (IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMFEDK.2014.6867069

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title = "Heteroepitaxial growth of InSb thin films on a Ge(111) substrate",

abstract = "This paper discusses characteristics of the InSb films on Ge substrate. To grow high quality InSb films on Ge substrate, we tried to optimize the growth conditions. We carried out the direct growth of the InSb films on Ge(111) substrate by using two-step growth procedure. At first, we studied the effect of the growth temperature and thickness of the first layer.",

keywords = "Ge, Heteroepitaxial Growth, InSb",

author = "T. Mitsueda and T. Sakamoto and H. Shimoyama and M. Mori and K. Maezawa",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014 ; Conference date: 19-06-2014 Through 20-06-2014",

year = "2014",

month = jul,

day = "28",

doi = "10.1109/IMFEDK.2014.6867069",

language = "英語",

series = "IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

Mitsueda, T, Sakamoto, T, Shimoyama, H, Mori, M & Maezawa, K 2014, Heteroepitaxial growth of InSb thin films on a Ge(111) substrate. in IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai., 6867069, IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai, Institute of Electrical and Electronics Engineers Inc., 12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014, Kyoto, Japan, 2014/06/19. https://doi.org/10.1109/IMFEDK.2014.6867069

Heteroepitaxial growth of InSb thin films on a Ge(111) substrate. / Mitsueda, T.; Sakamoto, T.; Shimoyama, H. et al.
IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc., 2014. 6867069 (IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Heteroepitaxial growth of InSb thin films on a Ge(111) substrate

AU - Mitsueda, T.

AU - Sakamoto, T.

AU - Shimoyama, H.

AU - Mori, M.

AU - Maezawa, K.

PY - 2014/7/28

Y1 - 2014/7/28

N2 - This paper discusses characteristics of the InSb films on Ge substrate. To grow high quality InSb films on Ge substrate, we tried to optimize the growth conditions. We carried out the direct growth of the InSb films on Ge(111) substrate by using two-step growth procedure. At first, we studied the effect of the growth temperature and thickness of the first layer.

AB - This paper discusses characteristics of the InSb films on Ge substrate. To grow high quality InSb films on Ge substrate, we tried to optimize the growth conditions. We carried out the direct growth of the InSb films on Ge(111) substrate by using two-step growth procedure. At first, we studied the effect of the growth temperature and thickness of the first layer.

KW - Ge

KW - Heteroepitaxial Growth

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DO - 10.1109/IMFEDK.2014.6867069

M3 - 会議への寄与

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T3 - IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai

BT - IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014

Y2 - 19 June 2014 through 20 June 2014

ER -

Mitsueda T, Sakamoto T, Shimoyama H, Mori M, Maezawa K. Heteroepitaxial growth of InSb thin films on a Ge(111) substrate. In IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc. 2014. 6867069. (IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai). doi: 10.1109/IMFEDK.2014.6867069

Heteroepitaxial growth of InSb thin films on a Ge(111) substrate

Abstract

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Conference

Keywords

ASJC Scopus subject areas

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