TY - JOUR
T1 - Growth temperature effect on the heteroepitaxy of InSb on Si(111)
AU - Rao, B. V.
AU - Okamoto, T.
AU - Shinmura, A.
AU - Gruznev, D.
AU - Mori, M.
AU - Tambo, T.
AU - Tatsuyama, C.
N1 - Funding Information:
The present work has been supported partly by a Grant-in-Aid for Scientific Research (10450005) from the Ministry of Education, Science, Sports and Culture, Japan and by a Grant (011039-A) from Iketani Science and Technology Foundation, Japan.
PY - 2000/6
Y1 - 2000/6
N2 - Direct growth of InSb on Si(111) substrate is achieved by suitably adjusting the growth rate and substrate temperature. In this report, we detail the role of stoichiometry and growth temperature in the evolution of reflection high-energy electron diffraction (RHEED) patterns, surface morphology and the crystal quality. InSb is grown on Si(111)-(7×7) surface by evaporating In and Sb simultaneously. Results indicate that smooth heteroepitaxial InSb films could be grown up to 300 °C, and above this temperature, severe degradation in the epitaxial quality of the films is observed. Properties of the Sb-rich films are compared with those of In-rich films and the importance of stoichiometry in the crystal quality is discussed.
AB - Direct growth of InSb on Si(111) substrate is achieved by suitably adjusting the growth rate and substrate temperature. In this report, we detail the role of stoichiometry and growth temperature in the evolution of reflection high-energy electron diffraction (RHEED) patterns, surface morphology and the crystal quality. InSb is grown on Si(111)-(7×7) surface by evaporating In and Sb simultaneously. Results indicate that smooth heteroepitaxial InSb films could be grown up to 300 °C, and above this temperature, severe degradation in the epitaxial quality of the films is observed. Properties of the Sb-rich films are compared with those of In-rich films and the importance of stoichiometry in the crystal quality is discussed.
UR - http://www.scopus.com/inward/record.url?scp=0034206762&partnerID=8YFLogxK
U2 - 10.1016/S0169-4332(00)00074-X
DO - 10.1016/S0169-4332(00)00074-X
M3 - 会議記事
AN - SCOPUS:0034206762
SN - 0169-4332
VL - 159
SP - 335
EP - 340
JO - Applied Surface Science
JF - Applied Surface Science
T2 - 3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3)
Y2 - 25 October 1999 through 29 October 1999
ER -