Gate-bias and temperature dependence in pentacene-based organic thin film transistor with MoO3/Au contacts

Safizan Shaari; Shigeki Naka; Hiroyuki Okada

doi:10.1109/ICIPRM.2016.7528715

Gate-bias and temperature dependence in pentacene-based organic thin film transistor with MoO₃/Au contacts

Safizan Shaari, Shigeki Naka, Hiroyuki Okada

Electric and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We report on gate-bias and temperature dependence of pentacene-based organic thin film transistors (OTFTs) with MoO₃/Au contacts. In this study, we confirmed to obtain nearly zero activation energy (E_A) without applied gate biases at a temperature between 133 K and 293 K. By increasing gate voltage, the activation energy for pentacene-based OTFT decreases concurrently. The effect of activation energy is attributed to the carrier transport occurred either via charge injection at a source/drain or in the organic materials while transport across grain boundaries/barrier height, due to the Fermi level shifted and/ or changed due to the free carrier concentration.

Original language	English
Title of host publication	2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509019649
DOIs	https://doi.org/10.1109/ICIPRM.2016.7528715
State	Published - 2016/08/01
Event	2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan Duration: 2016/06/26 → 2016/06/30

Publication series

Name	2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

Conference

Conference	2016 Compound Semiconductor Week, CSW 2016
Country/Territory	Japan
City	Toyama
Period	2016/06/26 → 2016/06/30

Keywords

molybdenum oxide
organic thin film transistor
pentacene
temperature dependence

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ICIPRM.2016.7528715

Cite this

Shaari, S., Naka, S., & Okada, H. (2016). Gate-bias and temperature dependence in pentacene-based organic thin film transistor with MoO₃/Au contacts. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 Article 7528715 (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2016.7528715

Shaari, Safizan ; Naka, Shigeki ; Okada, Hiroyuki. / Gate-bias and temperature dependence in pentacene-based organic thin film transistor with MoO₃/Au contacts. 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).

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title = "Gate-bias and temperature dependence in pentacene-based organic thin film transistor with MoO3/Au contacts",

abstract = "We report on gate-bias and temperature dependence of pentacene-based organic thin film transistors (OTFTs) with MoO3/Au contacts. In this study, we confirmed to obtain nearly zero activation energy (EA) without applied gate biases at a temperature between 133 K and 293 K. By increasing gate voltage, the activation energy for pentacene-based OTFT decreases concurrently. The effect of activation energy is attributed to the carrier transport occurred either via charge injection at a source/drain or in the organic materials while transport across grain boundaries/barrier height, due to the Fermi level shifted and/ or changed due to the free carrier concentration.",

keywords = "molybdenum oxide, organic thin film transistor, pentacene, temperature dependence",

author = "Safizan Shaari and Shigeki Naka and Hiroyuki Okada",

note = "Publisher Copyright: {\"i}¿½ 2016 IEEE.; 2016 Compound Semiconductor Week, CSW 2016 ; Conference date: 26-06-2016 Through 30-06-2016",

year = "2016",

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doi = "10.1109/ICIPRM.2016.7528715",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Shaari, S, Naka, S & Okada, H 2016, Gate-bias and temperature dependence in pentacene-based organic thin film transistor with MoO₃/Au contacts. in 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016., 7528715, 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, Institute of Electrical and Electronics Engineers Inc., 2016 Compound Semiconductor Week, CSW 2016, Toyama, Japan, 2016/06/26. https://doi.org/10.1109/ICIPRM.2016.7528715

Gate-bias and temperature dependence in pentacene-based organic thin film transistor with MoO₃/Au contacts. / Shaari, Safizan; Naka, Shigeki ; Okada, Hiroyuki.
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7528715 (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Naka, Shigeki

AU - Okada, Hiroyuki

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N2 - We report on gate-bias and temperature dependence of pentacene-based organic thin film transistors (OTFTs) with MoO3/Au contacts. In this study, we confirmed to obtain nearly zero activation energy (EA) without applied gate biases at a temperature between 133 K and 293 K. By increasing gate voltage, the activation energy for pentacene-based OTFT decreases concurrently. The effect of activation energy is attributed to the carrier transport occurred either via charge injection at a source/drain or in the organic materials while transport across grain boundaries/barrier height, due to the Fermi level shifted and/ or changed due to the free carrier concentration.

AB - We report on gate-bias and temperature dependence of pentacene-based organic thin film transistors (OTFTs) with MoO3/Au contacts. In this study, we confirmed to obtain nearly zero activation energy (EA) without applied gate biases at a temperature between 133 K and 293 K. By increasing gate voltage, the activation energy for pentacene-based OTFT decreases concurrently. The effect of activation energy is attributed to the carrier transport occurred either via charge injection at a source/drain or in the organic materials while transport across grain boundaries/barrier height, due to the Fermi level shifted and/ or changed due to the free carrier concentration.

KW - molybdenum oxide

KW - organic thin film transistor

KW - pentacene

KW - temperature dependence

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T3 - 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

BT - 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 26 June 2016 through 30 June 2016

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Shaari S, Naka S , Okada H. Gate-bias and temperature dependence in pentacene-based organic thin film transistor with MoO₃/Au contacts. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7528715. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). doi: 10.1109/ICIPRM.2016.7528715