Fully self-aligned oxide-semiconductor field-effect transistors

Fully self-aligned oxide-semiconductor field-effect transistors have been investigated. In this transistor process, layout patterns Of the gate, source and drain electrodes are determined by the first patterning Of gate electrode. From a Viewpolnt Of this concept, 8×8 active-matrix back-plane was fabricated. Transparent electrodes of source and drain are also tested by assumlng a liquid crystal display, organic electroluminescence display₂ and electronic paper. Obtained field-effect mobility of the transistor was 5 cm /Vs. This device concept is effective for a flexible display, where, its Substrate will be deformed durlng thermal process.