TY - GEN
T1 - Formation of nanoclusters containing in and Sb atoms
AU - Saito, M.
AU - Sasaki, H.
AU - Sasaki, T.
AU - Mori, M.
AU - Tambo, T.
AU - Tatsuyama, C.
PY - 2006/3
Y1 - 2006/3
N2 - It have been reported that in deposition onto the Si(111)-(7 × 7) reconstruction under suitable conditions resulted in the formation of the ordered In nanocluster array structure. Such ordered array structures of metal nanoclusters are promising materials for an ultra-high density recording and nanocatalysis, etc. In the present report, we deposit Sb onto the In nanocluster array structure on the Si(111)-(7 × 7) reconstructed surface, and observe clusters containing In and Sb atoms by STM.
AB - It have been reported that in deposition onto the Si(111)-(7 × 7) reconstruction under suitable conditions resulted in the formation of the ordered In nanocluster array structure. Such ordered array structures of metal nanoclusters are promising materials for an ultra-high density recording and nanocatalysis, etc. In the present report, we deposit Sb onto the In nanocluster array structure on the Si(111)-(7 × 7) reconstructed surface, and observe clusters containing In and Sb atoms by STM.
UR - http://www.scopus.com/inward/record.url?scp=33744961309&partnerID=8YFLogxK
U2 - 10.1051/jp4:2006132028
DO - 10.1051/jp4:2006132028
M3 - 会議への寄与
AN - SCOPUS:33744961309
SN - 2868839185
SN - 9782868839183
T3 - Journal De Physique. IV : JP
SP - 141
EP - 145
BT - Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
T2 - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
Y2 - 3 July 2005 through 8 July 2005
ER -