Abstract
The formation mechanism of the 7 × 7 reconstruction on annealed Si (1 1 1) surfaces was demonstrated. The bond-rearrangements proceeded along one side of a triangular F-half by breaking the existing dimers and forming new dimers like a 'zipper'. The sequential size change (SSC) model and the zipper-like restructuring could reduce the number of dangling bonds appearing at each moment during the size changes.
Original language | English |
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Pages (from-to) | 219-229 |
Number of pages | 11 |
Journal | Surface Science |
Volume | 526 |
Issue number | 3 |
DOIs | |
State | Published - 2003/03/01 |
Keywords
- Growth
- Low index single crystal surfaces
- Scanning tunneling microscopy
- Silicon
- Surface structure, morphology, roughness, and topography
- Surface thermodynamics (including phase transitions)
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry