Formation mechanism of the Si(1 1 1) 7 × 7 reconstruction studied by scanning tunneling microscopy: Zipper-like restructuring in the sequential size changes of isolated single faulted-halves

Wataru Shimada*, Hiroshi Tochihara

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The formation mechanism of the 7 × 7 reconstruction on annealed Si (1 1 1) surfaces was demonstrated. The bond-rearrangements proceeded along one side of a triangular F-half by breaking the existing dimers and forming new dimers like a 'zipper'. The sequential size change (SSC) model and the zipper-like restructuring could reduce the number of dangling bonds appearing at each moment during the size changes.

Original languageEnglish
Pages (from-to)219-229
Number of pages11
JournalSurface Science
Volume526
Issue number3
DOIs
StatePublished - 2003/03/01

Keywords

  • Growth
  • Low index single crystal surfaces
  • Scanning tunneling microscopy
  • Silicon
  • Surface structure, morphology, roughness, and topography
  • Surface thermodynamics (including phase transitions)

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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