TY - GEN
T1 - Fabrication of thienoacene-based Organic Thin-Film Transistors with various interfacial layers
AU - Shaari, Safizan Binti
AU - Naka, Shigeki
AU - Okada, Hiroyuki
N1 - Publisher Copyright:
© 2015 JSAP.
PY - 2015/7/30
Y1 - 2015/7/30
N2 - Organic Thin-Film Transistors (OTFTs) using thienoacene-based organic semiconductors with various insulating interfacial layers (IILs) between the organic semiconductor and the dielectric layer were investigated. A field-effect mobility and threshold voltage of OTFT without interfacial layer using C8-BTBT were 1.85 cm2/Vs and -5 V, respectively. By inserting the IIL especially for 2nd polymer materials and SAM treatment, the threshold voltage of the OTFT was slightly shifted to low threshold voltage. However, by using high-k materials such as HfO2 and Si3N4, the threshold voltage was increased to -0.8 V and -3.5 V, respectively. These results showed that threshold voltage is influenced by the using different interfacial layers due to the presence intermolecular interaction on the charge transports occur via a hopping mechanism at grain boundaries of organic semiconductor and dielectric interface.
AB - Organic Thin-Film Transistors (OTFTs) using thienoacene-based organic semiconductors with various insulating interfacial layers (IILs) between the organic semiconductor and the dielectric layer were investigated. A field-effect mobility and threshold voltage of OTFT without interfacial layer using C8-BTBT were 1.85 cm2/Vs and -5 V, respectively. By inserting the IIL especially for 2nd polymer materials and SAM treatment, the threshold voltage of the OTFT was slightly shifted to low threshold voltage. However, by using high-k materials such as HfO2 and Si3N4, the threshold voltage was increased to -0.8 V and -3.5 V, respectively. These results showed that threshold voltage is influenced by the using different interfacial layers due to the presence intermolecular interaction on the charge transports occur via a hopping mechanism at grain boundaries of organic semiconductor and dielectric interface.
UR - http://www.scopus.com/inward/record.url?scp=84947999153&partnerID=8YFLogxK
U2 - 10.1109/AM-FPD.2015.7173217
DO - 10.1109/AM-FPD.2015.7173217
M3 - 会議への寄与
AN - SCOPUS:84947999153
T3 - Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials
SP - 127
EP - 128
BT - Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015
Y2 - 1 July 2015 through 4 July 2015
ER -