Fabrication and gas sensing properties of In2 O3 nanopushpins

Ahsanulhaq Qurashi; Toshinari Yamazaki; E. M. El-Maghraby; Toshio Kikuta

doi:10.1063/1.3216052

Fabrication and gas sensing properties of In2 O³ nanopushpins

Ahsanulhaq Qurashi, Toshinari Yamazaki^*, E. M. El-Maghraby, Toshio Kikuta

^*Corresponding author for this work

Electric and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

The growth of nanopushpin-like In2 O³ nanostructures was demonstrated on the silicon substrate by catalyst-free chemical vapor deposition method. Structural analysis revealed single-crystalline nature of the In2 O³ nanopushpins with a cubic crystal structure. The hydrogen sensor made from the In2 O³ nanopushpins showed swift response and excellent stability. The influence of operation temperature on the hydrogen gas sensing property of In2 O³ nanostructures was also investigated. Our results reveal that the sensor response of In2 O³ nanopushpins increases with increasing the operation temperature.

Original language	English
Article number	153109
Journal	Applied Physics Letters
Volume	95
Issue number	15
DOIs	https://doi.org/10.1063/1.3216052
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3216052

Cite this

@article{dbbddfce519644fe8aa3683539201ea8,

title = "Fabrication and gas sensing properties of In2 O3 nanopushpins",

abstract = "The growth of nanopushpin-like In2 O3 nanostructures was demonstrated on the silicon substrate by catalyst-free chemical vapor deposition method. Structural analysis revealed single-crystalline nature of the In2 O3 nanopushpins with a cubic crystal structure. The hydrogen sensor made from the In2 O3 nanopushpins showed swift response and excellent stability. The influence of operation temperature on the hydrogen gas sensing property of In2 O3 nanostructures was also investigated. Our results reveal that the sensor response of In2 O3 nanopushpins increases with increasing the operation temperature.",

author = "Ahsanulhaq Qurashi and Toshinari Yamazaki and El-Maghraby, {E. M.} and Toshio Kikuta",

year = "2009",

doi = "10.1063/1.3216052",

language = "英語",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Fabrication and gas sensing properties of In2 O3 nanopushpins

AU - Qurashi, Ahsanulhaq

AU - Yamazaki, Toshinari

AU - El-Maghraby, E. M.

AU - Kikuta, Toshio

PY - 2009

Y1 - 2009

N2 - The growth of nanopushpin-like In2 O3 nanostructures was demonstrated on the silicon substrate by catalyst-free chemical vapor deposition method. Structural analysis revealed single-crystalline nature of the In2 O3 nanopushpins with a cubic crystal structure. The hydrogen sensor made from the In2 O3 nanopushpins showed swift response and excellent stability. The influence of operation temperature on the hydrogen gas sensing property of In2 O3 nanostructures was also investigated. Our results reveal that the sensor response of In2 O3 nanopushpins increases with increasing the operation temperature.

AB - The growth of nanopushpin-like In2 O3 nanostructures was demonstrated on the silicon substrate by catalyst-free chemical vapor deposition method. Structural analysis revealed single-crystalline nature of the In2 O3 nanopushpins with a cubic crystal structure. The hydrogen sensor made from the In2 O3 nanopushpins showed swift response and excellent stability. The influence of operation temperature on the hydrogen gas sensing property of In2 O3 nanostructures was also investigated. Our results reveal that the sensor response of In2 O3 nanopushpins increases with increasing the operation temperature.

UR - http://www.scopus.com/inward/record.url?scp=70350050860&partnerID=8YFLogxK

U2 - 10.1063/1.3216052

DO - 10.1063/1.3216052

M3 - 学術論文

AN - SCOPUS:70350050860

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 153109