Abstract
Measurement method of trapped charge into an organic field-effect transistor (OFET) by applying drain pulse voltage has investigated. Source current was measured by changing direct current (DC) gate voltage. Source current show different behavior that compared to ideal current response waveform and trapped carrier density could be estimated by calculating difference of charge between ideal and experimental current. Herewith, amount of trapped charge can be measured by changing a position of Fermi level at semiconductor surface and this values are varied between 1.1 and 5.8×10 12cm-2eV-1 in a pentacene OFET with Ta 2O5/perfluoro-resin insulator.
| Original language | English |
|---|---|
| Pages | 65-68 |
| Number of pages | 4 |
| State | Published - 2008 |
| Event | 15th International Display Workshops, IDW '08 - Niigata, Japan Duration: 2008/12/03 → 2008/12/05 |
Conference
| Conference | 15th International Display Workshops, IDW '08 |
|---|---|
| Country/Territory | Japan |
| City | Niigata |
| Period | 2008/12/03 → 2008/12/05 |
ASJC Scopus subject areas
- Hardware and Architecture
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials