TY - GEN
T1 - Evaluation of Perovskite Photo-sensors with Electron-beam Evaporated Titanium Dioxide Films
AU - Hossain, M. F.
AU - Hirano, I.
AU - Naka, S.
AU - Okada, H.
N1 - Publisher Copyright:
© 2019 FTFMD.
PY - 2019/7
Y1 - 2019/7
N2 - We have investigated a perovskite photo-sensors with electron-beam evaporated titanium dioxide (TiO2) film as an electron transport buffer layer. The TiO2 films have been deposited on indium-doped tin oxide (ITO) glass substrate at room temperature. Then, prepared TiO2 films are annealed at different temperatures of between room temperature and 500°C. Device structure is ITO/TiO2/Perovskite layer/2,2,7,7-tetrakis (N,N-di-p-methoxyphenylamine)-9,9-spirobifluorene/Au. Before and after annealing process, TiO2 films have changed from an amorphous to crystalline structure mixed with anatase and rutile phases. For a sensing characteristics, a ratio of photo- and dark-current was 1.1×103 without annealing condition. It is assumed that a flat device structure and a larger photocurrent under illumination are effective to reduce carrier generation site.
AB - We have investigated a perovskite photo-sensors with electron-beam evaporated titanium dioxide (TiO2) film as an electron transport buffer layer. The TiO2 films have been deposited on indium-doped tin oxide (ITO) glass substrate at room temperature. Then, prepared TiO2 films are annealed at different temperatures of between room temperature and 500°C. Device structure is ITO/TiO2/Perovskite layer/2,2,7,7-tetrakis (N,N-di-p-methoxyphenylamine)-9,9-spirobifluorene/Au. Before and after annealing process, TiO2 films have changed from an amorphous to crystalline structure mixed with anatase and rutile phases. For a sensing characteristics, a ratio of photo- and dark-current was 1.1×103 without annealing condition. It is assumed that a flat device structure and a larger photocurrent under illumination are effective to reduce carrier generation site.
UR - http://www.scopus.com/inward/record.url?scp=85073230090&partnerID=8YFLogxK
U2 - 10.23919/AM-FPD.2019.8830581
DO - 10.23919/AM-FPD.2019.8830581
M3 - 会議への寄与
AN - SCOPUS:85073230090
T3 - AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings
BT - AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019
Y2 - 2 July 2019 through 5 July 2019
ER -