Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting

Y. Niida, K. Takashina, Y. Ono, A. Fujiwara, Y. Hirayama

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@article{d0fe2fd3d6ae49e2a1c444f6ae39bf59,

title = "Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting",

author = "Y. Niida and K. Takashina and Y. Ono and A. Fujiwara and Y. Hirayama",

year = "2013",

doi = "10.1063/1.4803014",

language = "日本",

volume = "Vol. 102, No. 19",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting

AU - Niida, Y.

AU - Takashina, K.

AU - Ono, Y.

AU - Fujiwara, A.

AU - Hirayama, Y.

PY - 2013

Y1 - 2013

U2 - 10.1063/1.4803014

DO - 10.1063/1.4803014

M3 - 学術論文

SN - 0003-6951

VL - Vol. 102, No. 19

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -