Abstract
This paper presents the device technology for monolithic integration of InP-based resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs). The potential of this technology for applications in quantum functional devices and circuits is demonstrated in two integration schemes in which RTDs and FETs are integrated either in parallel or in series. Based on the parallel integration scheme, we demonstrate an integrated device which exhibits negative differential resistance and modulated peak current. This integrated device forms the foundation of a new category of functional circuits featuring clocked supply voltage. Based on the series integration scheme, resonant-tunneling high electron mobility transistors (RTHEMTs) with novel current-voltage characteristics and useful circuit applications are demonstrated. The high-frequency characteristics of RTHEMTs are also reported.
| Original language | English |
|---|---|
| Pages (from-to) | 1515-1523 |
| Number of pages | 9 |
| Journal | IEICE Transactions on Electronics |
| Volume | E79-C |
| Issue number | 11 |
| State | Published - 1996 |
Keywords
- HEMT
- Negative differential resistance
- Negative transconductance
- Quantum functional devices
- RTD
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering