Correlation between contact angle and electrical properties in pentacene and C6-DNT-V-based organic thin film transistors

Safizan Shaari; Shigeki Naka; Hiroyuki Okada

doi:10.1109/AM-FPD.2016.7543650

Correlation between contact angle and electrical properties in pentacene and C6-DNT-V-based organic thin film transistors

Safizan Shaari, Shigeki Naka, Hiroyuki Okada

Electric and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We have fabricated pentacene and C6-DNT-V-based organic thin film transistors (OTFTs) with various types of interfacial layer. Eight different kinds of OTFTs were fabricated without and with interfacial layers (CT4112, PMMA, Cytop, OTS, HMDS, Ta₂O₅ and Si₃N₄). The surface properties of contact angle and electrical properties of OTFTs include charge carrier mobility, threshold voltage, and on/off current ratio were measured to compare and analyse the relationship between them. Some of the device properties show strong correlations, especially the relationship between contact angle and threshold voltage shows the strong correlation coefficient compare with others relationship. Correlation coefficient (R) between contact angle and threshold voltage was 0.83 for the pentacene and 0.88 for the C6-DNT-V-based OTFTs.

Original language	English
Title of host publication	Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	160-162
Number of pages	3
ISBN (Electronic)	9784990875312
DOIs	https://doi.org/10.1109/AM-FPD.2016.7543650
State	Published - 2016/08/15
Event	23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, Japan Duration: 2016/07/06 → 2016/07/08

Publication series

Name	Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Conference

Conference	23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
Country/Territory	Japan
City	Kyoto
Period	2016/07/06 → 2016/07/08

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/AM-FPD.2016.7543650

Cite this

Shaari, S., Naka, S., & Okada, H. (2016). Correlation between contact angle and electrical properties in pentacene and C6-DNT-V-based organic thin film transistors. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 160-162). Article 7543650 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/AM-FPD.2016.7543650

Shaari, Safizan ; Naka, Shigeki ; Okada, Hiroyuki. / Correlation between contact angle and electrical properties in pentacene and C6-DNT-V-based organic thin film transistors. Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 160-162 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

@inproceedings{dddfc42b557848c38f2a016929ffe1f3,

title = "Correlation between contact angle and electrical properties in pentacene and C6-DNT-V-based organic thin film transistors",

abstract = "We have fabricated pentacene and C6-DNT-V-based organic thin film transistors (OTFTs) with various types of interfacial layer. Eight different kinds of OTFTs were fabricated without and with interfacial layers (CT4112, PMMA, Cytop, OTS, HMDS, Ta2O5 and Si3N4). The surface properties of contact angle and electrical properties of OTFTs include charge carrier mobility, threshold voltage, and on/off current ratio were measured to compare and analyse the relationship between them. Some of the device properties show strong correlations, especially the relationship between contact angle and threshold voltage shows the strong correlation coefficient compare with others relationship. Correlation coefficient (R) between contact angle and threshold voltage was 0.83 for the pentacene and 0.88 for the C6-DNT-V-based OTFTs.",

author = "Safizan Shaari and Shigeki Naka and Hiroyuki Okada",

note = "Publisher Copyright: {\textcopyright} 2016 FTFMD.; 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 ; Conference date: 06-07-2016 Through 08-07-2016",

year = "2016",

month = aug,

day = "15",

doi = "10.1109/AM-FPD.2016.7543650",

language = "英語",

series = "Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "160--162",

booktitle = "Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices",

}

Shaari, S, Naka, S & Okada, H 2016, Correlation between contact angle and electrical properties in pentacene and C6-DNT-V-based organic thin film transistors. in Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 7543650, Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Institute of Electrical and Electronics Engineers Inc., pp. 160-162, 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016, Kyoto, Japan, 2016/07/06. https://doi.org/10.1109/AM-FPD.2016.7543650

Correlation between contact angle and electrical properties in pentacene and C6-DNT-V-based organic thin film transistors. / Shaari, Safizan; Naka, Shigeki ; Okada, Hiroyuki.
Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. p. 160-162 7543650 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Correlation between contact angle and electrical properties in pentacene and C6-DNT-V-based organic thin film transistors

AU - Shaari, Safizan

AU - Naka, Shigeki

AU - Okada, Hiroyuki

PY - 2016/8/15

Y1 - 2016/8/15

N2 - We have fabricated pentacene and C6-DNT-V-based organic thin film transistors (OTFTs) with various types of interfacial layer. Eight different kinds of OTFTs were fabricated without and with interfacial layers (CT4112, PMMA, Cytop, OTS, HMDS, Ta2O5 and Si3N4). The surface properties of contact angle and electrical properties of OTFTs include charge carrier mobility, threshold voltage, and on/off current ratio were measured to compare and analyse the relationship between them. Some of the device properties show strong correlations, especially the relationship between contact angle and threshold voltage shows the strong correlation coefficient compare with others relationship. Correlation coefficient (R) between contact angle and threshold voltage was 0.83 for the pentacene and 0.88 for the C6-DNT-V-based OTFTs.

AB - We have fabricated pentacene and C6-DNT-V-based organic thin film transistors (OTFTs) with various types of interfacial layer. Eight different kinds of OTFTs were fabricated without and with interfacial layers (CT4112, PMMA, Cytop, OTS, HMDS, Ta2O5 and Si3N4). The surface properties of contact angle and electrical properties of OTFTs include charge carrier mobility, threshold voltage, and on/off current ratio were measured to compare and analyse the relationship between them. Some of the device properties show strong correlations, especially the relationship between contact angle and threshold voltage shows the strong correlation coefficient compare with others relationship. Correlation coefficient (R) between contact angle and threshold voltage was 0.83 for the pentacene and 0.88 for the C6-DNT-V-based OTFTs.

UR - http://www.scopus.com/inward/record.url?scp=84987652806&partnerID=8YFLogxK

U2 - 10.1109/AM-FPD.2016.7543650

DO - 10.1109/AM-FPD.2016.7543650

M3 - 会議への寄与

AN - SCOPUS:84987652806

T3 - Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

SP - 160

EP - 162

BT - Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016

Y2 - 6 July 2016 through 8 July 2016

ER -

Shaari S, Naka S , Okada H. Correlation between contact angle and electrical properties in pentacene and C6-DNT-V-based organic thin film transistors. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc. 2016. p. 160-162. 7543650. (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). doi: 10.1109/AM-FPD.2016.7543650

Correlation between contact angle and electrical properties in pentacene and C6-DNT-V-based organic thin film transistors

Abstract

Publication series

Conference

ASJC Scopus subject areas

Access to Document

Fingerprint

Cite this