Cell model of Si (111)7 × 7 structure

T. Kato*, Y. Saigo, M. Uchibe, H. Tochihara, W. Shimada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The phase transition of the Si(111)7 × 7 structure and its growth on a quenched surface are investigated theoretically. The surface structure is described in terms of states of faulted and unfaulted triangular halves of the 7 × 7 unit cell. A model Hamiltonian which satisfies peculiar features of the structure is derived. The Monte-Carlo simulation for this model shows that the 7 × 7 structure undergoes the first-order phase transition. Growth patterns of the 7 × 7 structure on the quenched surface are calculated with the same parameters and they reproduce characteristic features of experimental results. The calculation also qualitatively reproduces the temperature dependence of the critical nucleus size for the 7 × 7 domain growth on the quenched terrace.

Original languageEnglish
Pages (from-to)112-120
Number of pages9
JournalSurface Science
Volume416
Issue number1-2
DOIs
StatePublished - 1998/10/19

Keywords

  • Computer simulation
  • Model of surface kinetics
  • Si(111)
  • Surface phase transition
  • Surface reconstruction
  • Surface structure

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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