Bending strain characteristics of Ag/Bi(2223) tapes at liquid nitrogen temperature

K. Katagiri*, K. Hiroi, K. Kasaba, T. Asoh, T. Kuroda, K. Itoh, H. Wada, H. S. Shin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Bending strain dependence of critical current, Ic, of Ag/Bi-2223 57 filament tapes was investigated at 77 K and room temperature, RT, using a device invented by Goldacker. The strain where Ic start to degrade steeply at 77 K, 0.48%, was larger than that at RT, 0.36%. This is an indication of an additional pre-compression in filaments to be bent at 77 K compared with that at RT. According to the voltage measurements using multiple taps in the longitudinal direction, the Ic degradation behaviors at both temperatures varied depending on the section in the tape, due presumably to the difference in the crack propagation characteristics associated with the non-uniformity of the micro-structure. The onset strain for Ic degradation was more precisely determined. The degradation characteristics were shifted to the smaller strain in the present result as compared with that obtained by bending tests using G10 sample holders of different bending radius. The difference can be explained by the different thermal history on setting specimens to the holder and the constraints during cooling. The repeated bending tests at 77 K showed that the discrimination between the gradual and steep degradation stages was clear and the degradation was controlled by both the maximum strain and the strain range.

Original languageEnglish
Pages (from-to)1101-1106
Number of pages6
JournalPhysica C: Superconductivity and its Applications
Volume412-414
Issue numberSPEC. ISS.
DOIs
StatePublished - 2004/10

Keywords

  • Bending strain
  • Bi-2223
  • Critical current
  • Multifilament
  • Repeated strain
  • Reversed strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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