Application of sheet shaped plasma supplemented with radio frequency plasma source for production of thin films

Production technique of thin films is described as an application of a sheet shaped electron cyclotron resonance heating plasma supplemented with a radio frequency plasma source for controlling the plasma parameters. The deposition rate of thin films onto the substrate can be varied from 6 to 102 nm/min depending on the experimental conditions under control. The thin film is made uniformly in space over a wide range of plasma parameters. The present plasma source also has typical characteristics of sharp density and temperature gradient at the edge of the sheet plasma to make a uniform, low temperature (T_e≤1 eV) plasma in the outer peripheral region. The present experimental technique could be applicable to the plasma source for material processing such as thin film formation, semiconductor devices such as solar batteries or flat panel display, and so on.