All-organic self-aligned field-effect transistors

Tatsunori Muramoto; Shigeki Naka; Hiroyuki Okada

All-organic self-aligned field-effect transistors

Tatsunori Muramoto, Shigeki Naka, Hiroyuki Okada

Electric and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

All-organic self-aligned field-effect transistors were investigated. Using the back-surface exposure method, source and drain electrodes were self-aligned to gate electrode. Overlapping length of the gate-source and -drain electrodes was less than 1 μm. Transistor operation was confirmed and evaluated field effect mobility was 0.028 cm²/Vs.

Original language	English
Title of host publication	Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages	1824-1825
Number of pages	2
State	Published - 2012
Event	19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan Duration: 2012/12/04 → 2012/12/07

Publication series

Name	Proceedings of the International Display Workshops
Volume	3
ISSN (Print)	1883-2490

Conference

Conference	19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
Country/Territory	Japan
City	Kyoto
Period	2012/12/04 → 2012/12/07

Keywords

Organic FET
Pentacene
Self-alignment
Solution-process

ASJC Scopus subject areas

Computer Vision and Pattern Recognition
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@inproceedings{e1ce0217a1804129a451aa76eb3223d8,

title = "All-organic self-aligned field-effect transistors",

abstract = "All-organic self-aligned field-effect transistors were investigated. Using the back-surface exposure method, source and drain electrodes were self-aligned to gate electrode. Overlapping length of the gate-source and -drain electrodes was less than 1 μm. Transistor operation was confirmed and evaluated field effect mobility was 0.028 cm2/Vs.",

keywords = "Organic FET, Pentacene, Self-alignment, Solution-process",

author = "Tatsunori Muramoto and Shigeki Naka and Hiroyuki Okada",

year = "2012",

language = "英語",

isbn = "9781627486521",

series = "Proceedings of the International Display Workshops",

pages = "1824--1825",

booktitle = "Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012",

note = "19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 ; Conference date: 04-12-2012 Through 07-12-2012",

}

Muramoto, T, Naka, S & Okada, H 2012, All-organic self-aligned field-effect transistors. in Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. Proceedings of the International Display Workshops, vol. 3, pp. 1824-1825, 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012, Kyoto, Japan, 2012/12/04.

All-organic self-aligned field-effect transistors. / Muramoto, Tatsunori; Naka, Shigeki ; Okada, Hiroyuki.
Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. 2012. p. 1824-1825 (Proceedings of the International Display Workshops; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - All-organic self-aligned field-effect transistors

AU - Muramoto, Tatsunori

AU - Naka, Shigeki

AU - Okada, Hiroyuki

PY - 2012

Y1 - 2012

N2 - All-organic self-aligned field-effect transistors were investigated. Using the back-surface exposure method, source and drain electrodes were self-aligned to gate electrode. Overlapping length of the gate-source and -drain electrodes was less than 1 μm. Transistor operation was confirmed and evaluated field effect mobility was 0.028 cm2/Vs.

AB - All-organic self-aligned field-effect transistors were investigated. Using the back-surface exposure method, source and drain electrodes were self-aligned to gate electrode. Overlapping length of the gate-source and -drain electrodes was less than 1 μm. Transistor operation was confirmed and evaluated field effect mobility was 0.028 cm2/Vs.

KW - Organic FET

KW - Pentacene

KW - Self-alignment

KW - Solution-process

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M3 - 会議への寄与

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SN - 9781627486521

T3 - Proceedings of the International Display Workshops

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BT - Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012

T2 - 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012

Y2 - 4 December 2012 through 7 December 2012

ER -

All-organic self-aligned field-effect transistors

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

UN SDGs

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