Al2O3/InSb/Si quantum well MOSFETs having ultra-thin InSb layer

K. Maezawa, T. Ito, A. Kadoda, K. Nakayama, Y. Yasui, M.Mori, E. Miyazaki, T. Mizutani

Research output: Contribution to conference › Presentation

Original language	Japanese
State	Published - 2012
Externally published	Yes
Event	70th Device Research Conference, DRC 2012 - University Park, PA, United States Duration: 2012/06/18 → 2012/06/20

Conference	70th Device Research Conference, DRC 2012
Country/Territory	United States
City	University Park, PA
Period	2012/06/18 → 2012/06/20

Cite this

@conference{c01198eeb6274a63afecfcff678f51c7,

title = "Al2O3/InSb/Si quantum well MOSFETs having ultra-thin InSb layer",

author = "K. Maezawa and T. Ito and A. Kadoda and K. Nakayama and Y. Yasui and M.Mori and E. Miyazaki and T. Mizutani",

year = "2012",

language = "日本",

note = "70th Device Research Conference, DRC 2012 ; Conference date: 18-06-2012 Through 20-06-2012",

}