Al2O3/InSb/MOS diodes with an ultrathin InSb layer grown directly on Si(111) substrate using surface reconstruction controlled epitaxy.

K. Maezawa, A. Kadoda, T. Ito, Y. Yasui, M. Mori, E. Miyazaki, T. Mizutani

Research output: Contribution to conference › Presentation

Original language	Japanese
State	Published - 2012
Externally published	Yes
Event	11th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC) - Duration: 2012/01/01 → …

Conference	11th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC)
Period	2012/01/01 → …

Cite this

@conference{d0544579a4694443861e7d9c8884d475,

title = "Al2O3/InSb/MOS diodes with an ultrathin InSb layer grown directly on Si(111) substrate using surface reconstruction controlled epitaxy.",

author = "K. Maezawa and A. Kadoda and T. Ito and Y. Yasui and M. Mori and E. Miyazaki and T. Mizutani",

year = "2012",

language = "日本",

note = "11th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC) ; Conference date: 01-01-2012",

}

TY - CONF

T1 - Al2O3/InSb/MOS diodes with an ultrathin InSb layer grown directly on Si(111) substrate using surface reconstruction controlled epitaxy.

AU - Maezawa, K.

AU - Kadoda, A.

AU - Ito, T.

AU - Yasui, Y.

AU - Mori, M.

AU - Miyazaki, E.

AU - Mizutani, T.

PY - 2012

Y1 - 2012

M3 - 学会発表

T2 - 11th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC)

Y2 - 1 January 2012

ER -