Research on single-atom inelastic tunneling spectroscopy and atomic scale energy transfer

We first developed the measurement system that enables us to take the second derivatives of the current characteristics with very high precision. In addition, for the tunneling spectroscopy on a single impurity atom in silicon, we developed the system for electrically detected magnetic resonance (EDMR) with high sensitivity. Using the system, we observe the EDMR in platinum doped silicon PN diode, and successfully extracted the relaxation time for spin flip. We also developed the method for observing the recombination events in time domain in order to investigate the correlation between tunneling spectroscopy and the electron hole recombination. These studies were published in two letters.