Control of magnetic property in dopant lattice

In this research project, I have established two methods towards the ultimate control of electronic charges and spins based on silicon transistors. One is the time domain charge pumping, which is a method for detecting the current flow in a MOS transistor in time domain. The method enables us to analyze the dynamics of electronic charges in localized states (such as dopant atoms and interface defects) in detail. The other is the electrically detected magnetic resonance (EDMR), which is a method for detecting the spin resonance of electrons in localized states. Here, I successfully obtained the EDMR signals based on electron-hole recombination process at the defect states.